TCET1106G

Vishay Semiconductor Opto Division TCET1106G

Part Number:
TCET1106G
Manufacturer:
Vishay Semiconductor Opto Division
Ventron No:
3317421-TCET1106G
Description:
OPTOISOLATOR 5KV TRANS 4DIP
ECAD Model:
Datasheet:
TCET1106G

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Specifications
Vishay Semiconductor Opto Division TCET1106G technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Opto Division TCET1106G.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.400, 10.16mm)
  • Number of Pins
    4
  • Operating Temperature
    -40°C~100°C
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Additional Feature
    UL RECOGNIZED, VDE APPROVED
  • Voltage - Rated DC
    1.25V
  • Max Power Dissipation
    265mW
  • Voltage - Isolation
    5000Vrms
  • Output Voltage
    70V
  • Output Type
    Transistor
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Number of Channels
    1
  • Power Dissipation
    265mW
  • Input Type
    DC
  • Forward Current
    60mA
  • Max Output Voltage
    70V
  • Output Current per Channel
    50mA
  • Collector Emitter Voltage (VCEO)
    70V
  • Max Collector Current
    50mA
  • Rise / Fall Time (Typ)
    3μs 4.7μs
  • Reverse Breakdown Voltage
    6V
  • Max Input Current
    60mA
  • Collector Emitter Saturation Voltage
    300mV
  • Current Transfer Ratio (Min)
    100% @ 5mA
  • Input Current
    50mA
  • Current Transfer Ratio (Max)
    300% @ 5mA
  • Turn On / Turn Off Time (Typ)
    6μs, 5μs
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
TCET1106G Overview
This product is manufactured by Vishay Semiconductor Opto Division and belongs to the category of Optoisolators - Transistor, Photovoltaic Output. The images we provide are for reference only, for detailed product information please see specification sheet TCET1106G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of TCET1106G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
TCET1106G More Descriptions
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin DIL
OptoCouplers & OptoIsolators Phototransistor Out Single CTR 100-300%
DIP-4 CPLR SYSTEM U 100-300% CTR-e3
French Electronic Distributor since 1988
Optocoupler; No. of Channels:1; Isolation Voltage:600Vrms; Optocoupler Output Type:Transistor; Input Current Max:50mA; Output Voltage Max:70V; Package/Case:4-DIP; Leaded Process Compatible:Yes; Mounting Type:Through Hole ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to TCET1106G.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Additional Feature
    Voltage - Rated DC
    Max Power Dissipation
    Voltage - Isolation
    Output Voltage
    Output Type
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation
    Input Type
    Forward Current
    Max Output Voltage
    Output Current per Channel
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Rise / Fall Time (Typ)
    Reverse Breakdown Voltage
    Max Input Current
    Collector Emitter Saturation Voltage
    Current Transfer Ratio (Min)
    Input Current
    Current Transfer Ratio (Max)
    Turn On / Turn Off Time (Typ)
    Radiation Hardening
    RoHS Status
    Lead Free
    ECCN Code
    Terminal Finish
    Reach Compliance Code
    Dark Current-Max
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Forward (Vf) (Typ)
    Forward Voltage
    Current - Output / Channel
    Voltage - Output (Max)
    Current - DC Forward (If) (Max)
    Vce Saturation (Max)
    View Compare
  • TCET1106G
    TCET1106G
    14 Weeks
    Tin
    Through Hole
    Through Hole
    4-DIP (0.400, 10.16mm)
    4
    -40°C~100°C
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    UL RECOGNIZED, VDE APPROVED
    1.25V
    265mW
    5000Vrms
    70V
    Transistor
    1
    SINGLE
    1
    265mW
    DC
    60mA
    70V
    50mA
    70V
    50mA
    3μs 4.7μs
    6V
    60mA
    300mV
    100% @ 5mA
    50mA
    300% @ 5mA
    6μs, 5μs
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • TCET2200
    6 Weeks
    -
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -55°C~100°C
    Tube
    2014
    e3
    yes
    Active
    1 (Unlimited)
    UL RECOGNIZED, VDE APPROVED, MICROPROCESSOR SYSTEM INTERFACE
    1.25V
    200mW
    5300Vrms
    70V
    Transistor
    2
    -
    2
    400mW
    DC
    60mA
    70V
    50mA
    70V
    50mA
    3μs 4.7μs
    6V
    60mA
    300mV
    50% @ 5mA
    50mA
    600% @ 5mA
    6μs, 5μs
    -
    ROHS3 Compliant
    -
    EAR99
    Matte Tin (Sn)
    unknown
    100nA
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • TCET2100
    6 Weeks
    -
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -55°C~100°C
    Tube
    2001
    -
    -
    Active
    1 (Unlimited)
    -
    1.25V
    265mW
    5300Vrms
    70V
    Transistor
    -
    -
    2
    265mW
    DC
    60mA
    70V
    50mA
    70V
    50mA
    3μs 4.7μs
    6V
    60mA
    300mV
    50% @ 5mA
    50mA
    600% @ 5mA
    6μs, 5μs
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • TCET1114
    14 Weeks
    -
    Through Hole
    Through Hole
    4-DIP (0.300, 7.62mm)
    4
    -40°C~110°C
    Tube
    2014
    -
    -
    Active
    1 (Unlimited)
    -
    -
    265mW
    5000Vrms
    70V
    Transistor
    1
    -
    1
    265mW
    DC
    60mA
    70V
    50mA
    70V
    50mA
    3μs 4.7μs
    6V
    60mA
    300mV
    160% @ 10mA
    50mA
    320% @ 10mA
    6μs, 5μs
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    4-DIP
    110°C
    -40°C
    1.25V
    1.25V
    50mA
    70V
    60mA
    300mV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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