Infineon Technologies SIDC30D120E6

Name: SIDC30D120E6
Brand: Infineon Technologies
SKU: 3582534-SIDC30D120E6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SIDC30D120E6

Manufacturer:: Infineon Technologies

Ventron No:: 3582534-SIDC30D120E6

Description:: DIODE GEN PURP 1.2KV 35A WAFER

ECAD Model:

Datasheet:: SIDC30D120E6

Specifications

Infineon Technologies SIDC30D120E6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SIDC30D120E6.

Voltage - Forward (Vf) (Max) @ If:
1.9V @ 35A
Voltage - DC Reverse (Vr) (Max):
1200V (1.2kV)
Supplier Device Package:
Sawn on foil
Speed:
Standard Recovery >500ns, > 200mA (Io)
Series:
-
Packaging:
Bulk
Package / Case:
Die
Operating Temperature - Junction:
-55°C ~ 150°C
Mounting Type:
Surface Mount
Diode Type:
Standard
Current - Reverse Leakage @ Vr:
27µA @ 1200V
Current - Average Rectified (Io):
35A (DC)
Capacitance @ Vr, F:
-

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy International Rectifier (Infineon Technologies) SIDC30D120E6.

Product Comparison

The three parts on the right have similar specifications to SIDC30D120E6.

Image

Part Number

Manufacturer

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

RoHS Status

Lead Free

View Compare
SIDC30D120E6

Infineon Technologies

1.9V @ 35A

1200V (1.2kV)

Sawn on foil

Standard Recovery >500ns, > 200mA (Io)

-

Bulk

Die

-55°C ~ 150°C

Surface Mount

Standard

27µA @ 1200V

35A (DC)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SIDC01D120H6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

Die

SILICON

Bulk

2005

e0

Discontinued

1 (Unlimited)

1

EAR99

TIN LEAD

8541.10.00.40

Rectifier Diodes

UPPER

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

O-XUUC-N

Not Qualified

150°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard

27μA @ 1200V

600mA

1.6V @ 600mA

-55°C~150°C

1200V

600mA DC

1.2kV

600mA

Non-RoHS Compliant

Contains Lead

SIDC30D120E6 vs SIDC01D120H6
SIDC03D120F6

Infineon Technologies

2.1V @ 2A

1200V (1.2kV)

Sawn on foil

Standard Recovery >500ns, > 200mA (Io)

-

Bulk

Die

-55°C ~ 150°C

Surface Mount

Standard

27µA @ 1200V

2A (DC)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SIDC30D120E6 vs SIDC03D120F6
SIDC02D60F6

Infineon Technologies

1.6V @ 3A

600V

Sawn on foil

Fast Recovery = 200mA (Io)

-

Bulk

Die

-40°C ~ 150°C

Surface Mount

Standard

27µA @ 600V

3A (DC)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SIDC30D120E6 vs SIDC02D60F6