SEMIKRON SEMIX653GB176HDS
- Part Number:
- SEMIX653GB176HDS
- Manufacturer:
- SEMIKRON
- Ventron No:
- 5727900-SEMIX653GB176HDS
- Description:
- IGBT Modules
- Datasheet:
- SEMIX653GB176HDS
Images are for reference only.See Product Specifications for product details.If you are interested to buy SEMIKRON SEMIX653GB176HDS.
SEMIX653GB176HDS More Descriptions
IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC | SEMIKRON SEMIX653GB176HDS
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders
Igbt Power Module; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- Rohs Compliant: Yes |Semikron SEMIX653GB176HDS
IGBT MODULE, 2X1700V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1700V; Current Ic Continuous a Max:650A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 3s; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1.2V; Current Ic av:650A; Current, Icm Pulsed:900A; Current, Ifs Max:2900A; Time, Rise:90ns; Voltage, Vrrm:1700V
Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders
Igbt Power Module; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- Rohs Compliant: Yes |Semikron SEMIX653GB176HDS
IGBT MODULE, 2X1700V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1700V; Current Ic Continuous a Max:650A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 3s; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1.2V; Current Ic av:650A; Current, Icm Pulsed:900A; Current, Ifs Max:2900A; Time, Rise:90ns; Voltage, Vrrm:1700V
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