Toshiba Semiconductor and Storage RN2110,LF(CB

Name: RN2110,LF(CB
Brand: Toshiba Semiconductor and Storage
SKU: 2470994-RN2110,LF(CB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RN2110,LF(CB

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 2470994-RN2110,LF(CB

Description:: TRANS PREBIAS PNP 50V 0.1W SSM

ECAD Model:

Datasheet:: RN2110,LF(CB

Specifications

Toshiba Semiconductor and Storage RN2110,LF(CB technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2110,LF(CB.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Published
2014
Power Dissipation-Max
100mW
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
200MHz
RoHS Status
RoHS Compliant

Description

RN2110,LF(CB Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2110,LF(CB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2110,LF(CB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

RN2110,LF(CB More Descriptions

TRANS PREBIAS PNP 50V 0.1W SSM

Product Comparison

The three parts on the right have similar specifications to RN2110,LF(CB.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Published

Power Dissipation-Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Frequency - Transition

RoHS Status

Mounting Type

Package / Case

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Max Power Dissipation

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Resistor - Base (R1)

Resistor - Emitter Base (R2)

Supplier Device Package

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Surface Mount

Transistor Element Material

Subcategory

Reach Compliance Code

Number of Elements

Polarity/Channel Type

Power Dissipation-Max (Abs)

View Compare
RN2110,LF(CB

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

2014

100mW

300mV

100mA

50V

50V

200MHz

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
RN2104(T5L,F,T)

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

2014

-

300mV

100mA

50V

50V

200MHz

RoHS Compliant

Surface Mount

SC-75, SOT-416

Tape & Reel (TR)

Active

1 (Unlimited)

100mW

100mW

PNP - Pre-Biased

80 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

47 k Ω

47 k Ω

-

-

-

-

-

-

-

-

-

-

RN2110,LF(CB vs RN2104(T5L,F,T)
RN2117(T5L,F,T)

Toshiba Semiconductor and Storage

-

Surface Mount

2014

-

300mV

100mA

50V

50V

200MHz

RoHS Compliant

Surface Mount

SC-75, SOT-416

Tape & Reel (TR)

Obsolete

1 (Unlimited)

100mW

100mW

PNP - Pre-Biased

30 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

10 kOhms

4.7 kOhms

SSM

50V

100mA

-

-

-

-

-

-

-

RN2110,LF(CB vs RN2117(T5L,F,T)
RN2107CT(TPL3)

Toshiba Semiconductor and Storage

-

-

2014

-

-

-

-

-

-

-

Surface Mount

SC-101, SOT-883

Tape & Reel (TR)

Obsolete

1 (Unlimited)

-

50mW

PNP - Pre-Biased

120 @ 10mA 5V

500nA

150mV @ 250μA, 5mA

10 k Ω

47 k Ω

-

20V

50mA

YES

SILICON

BIP General Purpose Small Signal

unknown

1

PNP

0.05W

RN2110,LF(CB vs RN2107CT(TPL3)