Toshiba Semiconductor and Storage RN1130MFV,L3F

Name: RN1130MFV,L3F
Brand: Toshiba Semiconductor and Storage
SKU: 2471130-RN1130MFV,L3F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RN1130MFV,L3F

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 2471130-RN1130MFV,L3F

Description:: TRANS PREBIAS NPN 0.15W VESM

ECAD Model:

Datasheet:: RN1130MFV,L3F

Specifications

Toshiba Semiconductor and Storage RN1130MFV,L3F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1130MFV,L3F.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Packaging
Cut Tape (CT)
Published
2014
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Power - Max
150mW
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
100 kOhms
RoHS Status
RoHS Compliant

Description

RN1130MFV,L3F Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1130MFV,L3F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1130MFV,L3F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

RN1130MFV,L3F More Descriptions

Trans Digital BJT NPN 50V 0.1A 3-Pin VESM Embossed T/R
TRANS PREBIAS NPN 50V 0.1A VESM
TRANS VESM PD 0.15W F/1MHZ(LF)

Product Comparison

The three parts on the right have similar specifications to RN1130MFV,L3F.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Supplier Device Package

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Power Dissipation

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Breakdown Voltage

Frequency - Transition

Resistor - Base (R1)

Resistor - Emitter Base (R2)

RoHS Status

Transistor Element Material

Subcategory

Reach Compliance Code

Number of Elements

Polarity/Channel Type

Surface Mount

Power Dissipation-Max (Abs)

View Compare
RN1130MFV,L3F

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

Surface Mount

SOT-723

VESM

Cut Tape (CT)

2014

Discontinued

1 (Unlimited)

150mW

150mW

NPN - Pre-Biased

300mV

100mA

100 @ 10mA 5V

500nA

300mV @ 500μA, 5mA

50V

50V

100mA

50V

250MHz

100 kOhms

100 kOhms

RoHS Compliant

-

-

-

-

-

-

-

-
RN1102ACT(TPL3)

Toshiba Semiconductor and Storage

-

Surface Mount

Surface Mount

SC-101, SOT-883

-

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

100mW

100mW

NPN - Pre-Biased

150mV

80mA

50 @ 10mA 5V

500nA

150mV @ 250μA, 5mA

50V

-

-

50V

-

10 k Ω

10 k Ω

RoHS Compliant

SILICON

BIP General Purpose Small Signal

unknown

1

NPN

-

-

RN1130MFV,L3F vs RN1102ACT(TPL3)
RN1105CT(TPL3)

Toshiba Semiconductor and Storage

-

-

Surface Mount

SC-101, SOT-883

-

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

-

50mW

NPN - Pre-Biased

-

-

120 @ 10mA 5V

500nA

150mV @ 250μA, 5mA

-

20V

50mA

-

-

2.2 k Ω

47 k Ω

-

SILICON

BIP General Purpose Small Signal

-

1

NPN

YES

0.05W

RN1130MFV,L3F vs RN1105CT(TPL3)
RN1104ACT(TPL3)

Toshiba Semiconductor and Storage

-

Surface Mount

Surface Mount

SC-101, SOT-883

-

Tape & Reel (TR)

2014

Obsolete

1 (Unlimited)

100mW

100mW

NPN - Pre-Biased

150mV

80mA

80 @ 10mA 5V

500nA

150mV @ 250μA, 5mA

50V

-

-

50V

-

47 k Ω

47 k Ω

RoHS Compliant

SILICON

BIP General Purpose Small Signal

unknown

1

NPN

-

-

RN1130MFV,L3F vs RN1104ACT(TPL3)