Toshiba Semiconductor and Storage RN1113(T5L,F,T)
- Part Number:
- RN1113(T5L,F,T)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2471027-RN1113(T5L,F,T)
- Description:
- TRANS PREBIAS NPN 0.1W SSM
- ECAD Model:
-
- Datasheet:
- RN1113(T5L,F,T)
Toshiba Semiconductor and Storage RN1113(T5L,F,T) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1113(T5L,F,T).
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Supplier Device PackageSSM
- PackagingCut Tape (CT)
- Published2014
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation100mW
- PolarityNPN
- Element ConfigurationSingle
- Power - Max100mW
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Resistor - Base (R1)47 kOhms
- Continuous Collector Current100mA
- RoHS StatusRoHS Compliant
RN1113(T5L,F,T) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1113(T5L,F,T) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1113(T5L,F,T). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1113(T5L,F,T) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1113(T5L,F,T). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1113(T5L,F,T) More Descriptions
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
TRANS PREBIAS NPN 50V 0.1A SSM
French Electronic Distributor since 1988
TRANS PREBIAS NPN 50V 0.1A SSM
French Electronic Distributor since 1988
The three parts on the right have similar specifications to RN1113(T5L,F,T).
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationPolarityElement ConfigurationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentRoHS StatusResistor - Emitter Base (R2)Surface MountTransistor Element MaterialSubcategoryNumber of ElementsPolarity/Channel TypePower Dissipation-Max (Abs)Reach Compliance CodeView Compare
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RN1113(T5L,F,T)18 WeeksSurface MountSurface MountSC-75, SOT-416SSMCut Tape (CT)2014Discontinued1 (Unlimited)100mWNPNSingle100mWNPN - Pre-Biased300mV100mA120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V100mA50V250MHz5V12047 kOhms100mARoHS Compliant--------- -
14 Weeks-Surface MountSOT-723VESMTape & Reel (TR)2016Not For New Designs1 (Unlimited)---150mWNPN - Pre-Biased--50 @ 10mA 5V500nA300mV @ 250μA, 5mA-50V100mA-250MHz--2.2 kOhms-RoHS Compliant10 kOhms-------
-
--Surface MountSC-101, SOT-883-Tape & Reel (TR)2014Obsolete1 (Unlimited)---50mWNPN - Pre-Biased--120 @ 10mA 5V500nA150mV @ 250μA, 5mA-20V50mA----2.2 k Ω--47 k ΩYESSILICONBIP General Purpose Small Signal1NPN0.05W-
-
-Surface MountSurface MountSC-101, SOT-883-Tape & Reel (TR)2014Obsolete1 (Unlimited)100mW--100mWNPN - Pre-Biased150mV80mA70 @ 10mA 5V500nA150mV @ 250μA, 5mA50V--50V---22 k Ω-RoHS Compliant22 k Ω-SILICONBIP General Purpose Small Signal1NPN-unknown
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