QVA11134

Fairchild/ON Semiconductor QVA11134

Part Number:
QVA11134
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
4861852-QVA11134
Description:
SENS OPTO SLOT 3.18MM TRANS THRU
ECAD Model:
Datasheet:
QVA series

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Specifications
Fairchild/ON Semiconductor QVA11134 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor QVA11134.
  • Mounting Type
    Through Hole
  • Package / Case
    Module, PC Pins, Slot Type
  • Operating Temperature
    -40°C~85°C
  • Packaging
    Tube
  • Series
    QVA
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Output Configuration
    Phototransistor
  • Sensing Distance
    0.125 (3.18mm)
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Sensing Method
    Through-Beam
  • Current - DC Forward (If) (Max)
    50mA
Description
QVA11134 Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Optical Sensors - Photointerrupters - Slot Type - Transistor Output. The images we provide are for reference only, for detailed product information please see specification sheet QVA11134 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of QVA11134. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
QVA11134 More Descriptions
Photointerrupter Transmissive 3.18mm Phototransistor 4-Pin Rail
Infrared Emitter/Sensor Assemblies 1mA PHOTO TRANS
IC,Photo Gap Detector,1-CHANNEL,Gap-1c
SENS OPTO SLOT 3.18MM TRANS THRU
The QVA series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125-inch (3.18 mm) gap. A unique housing design provides a smooth external surface to prevent dust and dirt buildup while molded internal apertures give precise positioning and also provide protection from ambient light interference.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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