PDTD113ZT,215

Nexperia USA Inc. PDTD113ZT,215

Part Number:
PDTD113ZT,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2470324-PDTD113ZT,215
Description:
TRANS PREBIAS NPN 250MW TO236AB
ECAD Model:
Datasheet:
PDTD113ZT,215

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Specifications
Nexperia USA Inc. PDTD113ZT,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTD113ZT,215.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 10
  • Max Power Dissipation
    250mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    PDTD113
  • Pin Count
    3
  • Max Output Current
    500mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    250mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 50mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    70
  • Resistor - Base (R1)
    1 k Ω
  • Resistor - Emitter Base (R2)
    10 k Ω
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PDTD113ZT,215 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTD113ZT,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTD113ZT,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTD113ZT,215 More Descriptions
PDTD113ZT - 50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R
NPN - Pre-Biased 250mW 500mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
BRT TRANSISTOR, NPN, 50V, 500MA, 1KOHM / 10KOHM, 3-SOT-23; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:500mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:10 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PDTD113ZT,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Base Part Number
    Pin Count
    Max Output Current
    Operating Supply Voltage
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Emitter Base Voltage (VEBO)
    hFE Min
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transistor Element Material
    Configuration
    Polarity/Channel Type
    Transition Frequency
    Frequency - Transition
    View Compare
  • PDTD113ZT,215
    PDTD113ZT,215
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    Tape & Reel (TR)
    2005
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -65°C
    BUILT IN BIAS RESISTOR RATIO IS 10
    250mW
    DUAL
    GULL WING
    PDTD113
    3
    500mA
    50V
    1
    NPN
    Single
    250mW
    SWITCHING
    NPN - Pre-Biased
    50V
    500mA
    70 @ 50mA 5V
    500nA
    300mV @ 2.5mA, 50mA
    50V
    50V
    5V
    70
    1 k Ω
    10 k Ω
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PDTD113EK,115
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    Tape & Reel (TR)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    PDTD113
    -
    -
    -
    -
    -
    -
    -
    -
    NPN - Pre-Biased
    -
    -
    33 @ 50mA 5V
    500nA
    300mV @ 2.5mA, 50mA
    -
    -
    -
    -
    1 k Ω
    1 k Ω
    -
    -
    ROHS3 Compliant
    -
    250mW
    50V
    500mA
    -
    -
    -
    -
    -
  • PDTD123ES,126
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    Tape & Box (TB)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    PDTD123
    -
    -
    -
    -
    -
    -
    -
    -
    NPN - Pre-Biased
    -
    -
    40 @ 50mA 5V
    500nA
    300mV @ 2.5mA, 50mA
    -
    -
    -
    -
    2.2 k Ω
    2.2 k Ω
    -
    -
    ROHS3 Compliant
    -
    500mW
    50V
    500mA
    -
    -
    -
    -
    -
  • PDTD143XTVL
    4 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    Tape & Reel (TR)
    2014
    -
    Active
    1 (Unlimited)
    3
    -
    -
    -
    -
    320mW
    DUAL
    GULL WING
    -
    3
    -
    -
    1
    -
    -
    -
    SWITCHING
    NPN - Pre-Biased
    100mV
    500mA
    70 @ 50mA 5V
    500nA
    100mV @ 2.5mA, 50mA
    50V
    -
    -
    -
    4.7 k Ω
    10 k Ω
    -
    -
    ROHS3 Compliant
    -
    320mW
    -
    -
    SILICON
    SINGLE WITH BUILT-IN RESISTOR
    NPN
    225MHz
    225MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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