NXP USA Inc. PDTC143ZE,115
- Part Number:
- PDTC143ZE,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2473399-PDTC143ZE,115
- Description:
- TRANS PREBIAS NPN 150MW SC75
- Datasheet:
- PDTC143ZE,115
NXP USA Inc. PDTC143ZE,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PDTC143ZE,115.
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 10
- HTS Code8541.21.00.95
- SubcategoryBIP General Purpose Small Signal
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDTC143
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Power Dissipation-Max (Abs)0.15W
- Resistor - Base (R1)4.7 k Ω
- Resistor - Emitter Base (R2)47 k Ω
- RoHS StatusROHS3 Compliant
PDTC143ZE,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC143ZE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC143ZE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC143ZE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC143ZE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTC143ZE,115 More Descriptions
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-75 T/R
PDTC143Z series - NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Tape & Reel (TR) Surface Mount NPN SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 100 @ 10mA 5V 100mA 150mW 50V
TRANS NPN W/RES 50V SOT-416; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:100mV; Current Ic Continuous a Max:5mA; Hfe Min:100; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
PDTC143Z series - NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Tape & Reel (TR) Surface Mount NPN SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 100 @ 10mA 5V 100mA 150mW 50V
TRANS NPN W/RES 50V SOT-416; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:100mV; Current Ic Continuous a Max:5mA; Hfe Min:100; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to PDTC143ZE,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusReach Compliance CodeFactory Lead TimeMountNumber of PinsMax Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityElement ConfigurationCase ConnectionCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltagehFE MinContinuous Collector CurrentHeightLengthWidthRadiation HardeningLead FreeJEDEC-95 CodeView Compare
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PDTC143ZE,115Surface MountSC-75, SOT-416YESSILICONTape & Reel (TR)2003e3Obsolete1 (Unlimited)3EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 108541.21.00.95BIP General Purpose Small SignalDUALGULL WING26040DTC1433R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR150mWSWITCHINGNPNNPN - Pre-Biased100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V100mA0.15W4.7 k Ω47 k ΩROHS3 Compliant----------------------
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTape & Reel (TR)2009-Obsolete1 (Unlimited)3EAR99-BUILT-IN BIAS RESISTOR--DUALGULL WING---3R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR250mWSWITCHINGNPNNPN - Pre-Biased100 @ 50mA 5V500nA80mV @ 2.5mA, 50mA15V500mA-2.2 k Ω-ROHS3 Compliantunknown--------------------
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Surface MountSC-101, SOT-883--Tape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 1--BOTTOM---PDTC1153---1--SWITCHING-NPN - Pre-Biased80 @ 5mA 5V1μA150mV @ 250μA, 5mA---100 k Ω100 k ΩROHS3 Compliant-8 WeeksSurface Mount3150°C-65°C250mWNPNSingleCOLLECTOR50V20mA50V8020mA470μm1.02mm620μmNoLead Free-
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Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTape & Reel (TR)2006e3Obsolete1 (Unlimited)3EAR99TINBUILT-IN BIAS RESISTOR8541.21.00.95-DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDPDTC1143R-PDSO-G3Not Qualified-1SINGLE WITH BUILT-IN RESISTOR250mWSWITCHINGNPNNPN - Pre-Biased200 @ 1mA 5V1μA150mV @ 500μA, 10mA50V100mA-10 k Ω-ROHS3 Compliant--------------------TO-236AB
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