Nexperia USA Inc. PDTC143XMB,315
- Part Number:
- PDTC143XMB,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2473071-PDTC143XMB,315
- Description:
- TRANS PREBIAS NPN 250MW 3DFN
- ECAD Model:
-
- Datasheet:
- PDTC143XMB,315
Nexperia USA Inc. PDTC143XMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTC143XMB,315.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 2.1
- Max Power Dissipation250mW
- Terminal PositionBOTTOM
- Base Part NumberDTC143
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)100mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency230MHz
- Frequency - Transition230MHz
- Resistor - Base (R1)4.7 k Ω
- Resistor - Emitter Base (R2)10 k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PDTC143XMB,315 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC143XMB,315 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC143XMB,315. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC143XMB,315 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC143XMB,315. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTC143XMB,315 More Descriptions
PDTC143XMB - NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ
Trans Digital BJT NPN 50V 100mA 3-Pin DFN T/R
Rf Transistor Rohs Compliant: Yes |Nexperia PDTC143XMB,315
SOT-883B Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 3-Pin DFN T/R
Rf Transistor Rohs Compliant: Yes |Nexperia PDTC143XMB,315
SOT-883B Digital Transistors ROHS
The three parts on the right have similar specifications to PDTC143XMB,315.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal PositionBase Part NumberPin CountNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusSurface MountTransistor Element MaterialECCN CodeHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)VCEsat-MaxCollector-Base Capacitance-MaxPower Dissipation Ambient-MaxJEDEC-95 CodeView Compare
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PDTC143XMB,3158 WeeksSurface MountSurface Mount3-XFDFN3Tape & Reel (TR)2012e3Active1 (Unlimited)3Tin (Sn)150°C-65°CBUILT IN BIAS RESISTANCE RATIO IS 2.1250mWBOTTOMDTC14331SingleCOLLECTORSWITCHINGNPNNPN - Pre-Biased100mV100mA50 @ 10mA 5V1μA100mV @ 500μA, 10mA50V230MHz230MHz4.7 k Ω10 k ΩNoROHS3 Compliant--------------------- -
--Surface MountSC-75, SOT-416-Tape & Reel (TR)2003e3Obsolete1 (Unlimited)3Tin (Sn)--BUILT-IN BIAS RESISTOR RATIO IS 21.36-DUALPDTC12331--SWITCHINGNPNNPN - Pre-Biased--100 @ 10mA 5V1μA100mV @ 250μA, 5mA---2.2 k Ω47 k Ω-ROHS3 CompliantYESSILICONEAR998541.21.00.95BIP General Purpose Small SignalGULL WING26040R-PDSO-G3Not Qualified150°CSINGLE WITH BUILT-IN RESISTOR150mW50V100mA0.15W0.3 V3.5pF0.15W-
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--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-Tape & Box (TB)2009-Obsolete1 (Unlimited)-------PDTC144------NPN - Pre-Biased--40 @ 5mA 5V1μA150mV @ 500μA, 10mA---47 k Ω10 k Ω-ROHS3 Compliant------------500mW50V100mA-----
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--Surface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2006e3Obsolete1 (Unlimited)3TIN--BUILT-IN BIAS RESISTOR-DUALPDTC11431--SWITCHINGNPNNPN - Pre-Biased--200 @ 1mA 5V1μA150mV @ 500μA, 10mA---10 k Ω--ROHS3 CompliantYESSILICONEAR998541.21.00.95-GULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3Not Qualified-SINGLE WITH BUILT-IN RESISTOR250mW50V100mA----TO-236AB
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