NXP USA Inc. PDTC123TE,115
- Part Number:
- PDTC123TE,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2472905-PDTC123TE,115
- Description:
- TRANS PREBIAS NPN 150MW SC75
- ECAD Model:
-
- Datasheet:
- PDTC123TE,115
NXP USA Inc. PDTC123TE,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PDTC123TE,115.
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPDTC123
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Power Dissipation-Max (Abs)0.15W
- Resistor - Base (R1)2.2 k Ω
- RoHS StatusROHS3 Compliant
PDTC123TE,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC123TE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC123TE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC123TE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC123TE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTC123TE,115 More Descriptions
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-75 T/R
PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
TRANS PREBIAS NPN 150MW SC75
IC REG LINEAR 5V 150MA 8SOIC
PDTC123T series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
TRANS PREBIAS NPN 150MW SC75
IC REG LINEAR 5V 150MA 8SOIC
The three parts on the right have similar specifications to PDTC123TE,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Resistor - Base (R1)RoHS StatusECCN CodeAdditional FeatureResistor - Emitter Base (R2)VCEsat-MaxCollector-Base Capacitance-MaxPower Dissipation Ambient-MaxJEDEC-95 CodeView Compare
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PDTC123TE,115Surface MountSC-75, SOT-416YESSILICONTape & Reel (TR)2006e3Obsolete1 (Unlimited)3Tin (Sn)8541.21.00.75BIP General Purpose Small SignalDUALGULL WING26040PDTC1233R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR150mWSWITCHINGNPNNPN - Pre-Biased30 @ 20mA 5V1μA150mV @ 500μA, 10mA50V100mA0.15W2.2 k ΩROHS3 Compliant-------- -
Surface MountSC-75, SOT-416YESSILICONTape & Reel (TR)2003e3Obsolete1 (Unlimited)3Tin (Sn)8541.21.00.95BIP General Purpose Small SignalDUALGULL WING26040PDTC1233R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR150mWSWITCHINGNPNNPN - Pre-Biased100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V100mA0.15W2.2 k ΩROHS3 CompliantEAR99BUILT-IN BIAS RESISTOR RATIO IS 21.3647 k Ω0.3 V3.5pF0.15W-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)2009-Obsolete1 (Unlimited)--------PDTC144------500mW--NPN - Pre-Biased40 @ 5mA 5V1μA150mV @ 500μA, 10mA50V100mA-47 k ΩROHS3 Compliant--10 k Ω----
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTape & Reel (TR)2006e3Obsolete1 (Unlimited)3TIN8541.21.00.95-DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDPDTC1143R-PDSO-G3Not Qualified-1SINGLE WITH BUILT-IN RESISTOR250mWSWITCHINGNPNNPN - Pre-Biased200 @ 1mA 5V1μA150mV @ 500μA, 10mA50V100mA-10 k ΩROHS3 CompliantEAR99BUILT-IN BIAS RESISTOR----TO-236AB
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