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PDTC123ET,215

Nexperia USA Inc. PDTC123ET,215

Part Number:
PDTC123ET,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2470281-PDTC123ET,215
Description:
TRANS PREBIAS NPN 250MW TO236AB
ECAD Model:
Datasheet:
PDTC123ET,215

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Specifications
Nexperia USA Inc. PDTC123ET,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTC123ET,215.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    4.535924g
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • HTS Code
    8541.21.00.95
  • Max Power Dissipation
    250mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    PDTC123
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 20mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • Resistor - Base (R1)
    2.2 k Ω
  • Resistor - Emitter Base (R2)
    2.2 k Ω
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PDTC123ET,215 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTC123ET,215 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTC123ET,215. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTC123ET,215 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PDTC123ET Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-23
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin TO-236AB T/R
PDTC123E series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NPN - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS
Transistors - Bipolar (BJT) - Single, Pre-Biased 1 (Unlimited) Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3 NPN - Pre-Biased Surface Mount 30 @ 20mA 5V 150mV @ 500μA, 10mA 2.2 k Ω 1μA TRANS PREBIAS NPN 250MW TO236AB
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 2.2kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: PDTC123E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 20µA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Full Power Rating Temperature: 25°C; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 250mW; Power Dissipation Ptot Max: 250mW; Resistance R1: 2.2kohm; Resistance R2: 2.2kohm; Transistor Case Style: SOT-23; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Voltage Vcbo: 50V
Product Comparison
The three parts on the right have similar specifications to PDTC123ET,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Subcategory
    Power Dissipation-Max (Abs)
    VCEsat-Max
    Collector-Base Capacitance-Max
    Power Dissipation Ambient-Max
    View Compare
  • PDTC123ET,215
    PDTC123ET,215
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    4.535924g
    Tape & Reel (TR)
    2004
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -65°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    8541.21.00.95
    250mW
    DUAL
    GULL WING
    260
    40
    PDTC123
    3
    1
    NPN
    Single
    SWITCHING
    NPN - Pre-Biased
    50V
    100mA
    30 @ 20mA 5V
    1μA
    150mV @ 500μA, 10mA
    50V
    50V
    2.2 k Ω
    2.2 k Ω
    6.35mm
    6.35mm
    6.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PDTC323TK,115
    PDTC323TK,115
    NXP USA Inc.
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    Tape & Reel (TR)
    2009
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    BUILT-IN BIAS RESISTOR
    -
    -
    DUAL
    GULL WING
    -
    -
    -
    3
    1
    -
    -
    SWITCHING
    NPN - Pre-Biased
    -
    -
    100 @ 50mA 5V
    500nA
    80mV @ 2.5mA, 50mA
    -
    -
    2.2 k Ω
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    unknown
    R-PDSO-G3
    Not Qualified
    150°C
    SINGLE WITH BUILT-IN RESISTOR
    250mW
    NPN
    15V
    500mA
    -
    -
    -
    -
    -
    PDTC123ET,215 vs PDTC323TK,115
  • PDTC123JE,115
    PDTC123JE,115
    NXP USA Inc.
    -
    -
    Surface Mount
    SC-75, SOT-416
    -
    -
    Tape & Reel (TR)
    2003
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    -
    BUILT-IN BIAS RESISTOR RATIO IS 21.36
    8541.21.00.95
    -
    DUAL
    GULL WING
    260
    40
    PDTC123
    3
    1
    -
    -
    SWITCHING
    NPN - Pre-Biased
    -
    -
    100 @ 10mA 5V
    1μA
    100mV @ 250μA, 5mA
    -
    -
    2.2 k Ω
    47 k Ω
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    -
    R-PDSO-G3
    Not Qualified
    150°C
    SINGLE WITH BUILT-IN RESISTOR
    150mW
    NPN
    50V
    100mA
    BIP General Purpose Small Signal
    0.15W
    0.3 V
    3.5pF
    0.15W
    PDTC123ET,215 vs PDTC123JE,115
  • PDTC144VS,126
    PDTC144VS,126
    NXP USA Inc.
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    Tape & Box (TB)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PDTC144
    -
    -
    -
    -
    -
    NPN - Pre-Biased
    -
    -
    40 @ 5mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    47 k Ω
    10 k Ω
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    500mW
    -
    50V
    100mA
    -
    -
    -
    -
    -
    PDTC123ET,215 vs PDTC144VS,126
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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