ON Semiconductor NE5517DR2G

Name: NE5517DR2G
Brand: ON Semiconductor
SKU: 3186318-NE5517DR2G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NE5517DR2G

Manufacturer:: ON Semiconductor

Ventron No:: 3186318-NE5517DR2G

Description:: IC OPAMP TRANSCOND 2MHZ 16SOIC

ECAD Model:

Datasheet:: NE5517DR2G

Specifications

ON Semiconductor NE5517DR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NE5517DR2G.

Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Number of Pins
16
Weight
665.986997mg
Operating Temperature
0°C~70°C
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
16
ECCN Code
EAR99
Subcategory
Operational Amplifiers
Packing Method
TAPE AND REEL
Max Power Dissipation
1.125W
Technology
BIPOLAR
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Number of Functions
2
Supply Voltage
15V
Reflow Temperature-Max (s)
40
Base Part Number
NE5517
Pin Count
16
Output Type
Push-Pull
Operating Supply Voltage
30V
Number of Elements
2
Power Supplies
-15V
Number of Circuits
2
Operating Supply Current
2.6mA
Power Dissipation
1.125W
Output Current
350μA
Supply Current-Max
4mA
Slew Rate
50V/μs
Amplifier Type
Transconductance
Common Mode Rejection Ratio
80 dB
Current - Input Bias
400nA
Max Input Voltage
-3V
Voltage - Supply, Single/Dual (±)
4V~44V ±2V~22V
Halogen Free
Halogen Free
Output Current per Channel
650μA
Supply Type
Dual, Single
Input Offset Voltage (Vos)
5mV
Neg Supply Voltage-Nom (Vsup)
-15V
Unity Gain BW-Nom
2000 kHz
Average Bias Current-Max (IIB)
8μA
Low-Offset
NO
Frequency Compensation
YES
Voltage - Input Offset
400μV
Bias Current-Max (IIB) @25C
5μA
Nominal Gain Bandwidth Product
2MHz
Height
1.5mm
Length
10mm
Width
4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NE5517DR2G Overview
The NE5517 is a versatile amplifier with a 16-SOIC package, measuring 0.154 inches in width and 3.90mm in width. This compact size makes it suitable for a wide range of applications, while its packaging in Tape & Reel (TR) ensures easy handling and protection during transportation. With a Moisture Sensitivity Level (MSL) of 1 (Unlimited), this amplifier can withstand various environmental conditions without any impact on its performance. It also has a maximum power dissipation of 1.125W and a peak reflow temperature of 260 degrees Celsius, making it a reliable choice for demanding applications. The NE5517 has a base part number of NE5517 and a supply current-max of 4mA. Its amplifier type is transconductance, and it has a unity gain bandwidth of 2000 kHz. With a width of 4mm, this amplifier offers a compact and efficient solution for your circuit design needs.

NE5517DR2G Features
16 Pins
supply voltage of 15V
Output Type: Push-Pull

NE5517DR2G Applications
There are a lot of ON Semiconductor NE5517DR2G Instrumentational OP Amps applications.

High gain DC amplifier
Signal amplification
Integrator circuits
MP3
Strain gauges
Laptop
Signal transformation
Band-stop filter
Signal operation
Switching amplifier

NE5517DR2G More Descriptions

SP Amp Transconductance Amplifier Dual 卤22V/44V 16-Pin SOIC T/R - Tape and Reel
NE5517 Series 44 V 2 MHz Dual Operational Transconductance Amplifier - SOIC-16
ROHS3Compliant EAR99 NE5517 Tape & Reel (TR) op amp amplifier circuit 10mm 4mA 5mV 2000kHz
NE5517DR2G; Dual Transconductance Op Amp; 2MHz Push-Pull; 30 V; 16-Pin SOIC
Ic,operational Amplifier,dual,bipolar,sop,16Pin,plastic Rohs Compliant: Yes |Onsemi NE5517DR2G
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, PDSO16
TRANSCONDUCTANCE AMPLIFIER, DUAL, SOIC16; No. of Amplifiers: 2 Amplifier; Supply Voltage: 44VDC; Gain Bandwidth: 2MHz; Input Voltage Min: -; Input Voltage Max: -; Amplifier Case Style: SOIC; No. of Pins: 16Pins; Output Current Min: 350µA; Output Current - Max: 650µA; Slew Rate: 50V/µs; Input Resistance: 26kohm; Operating Temperature Min: 0°C; Operating Temperature Max: 70°C; Product Range: -; RoHS Phthalates Compliant: Yes; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification

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NE5517DR2G Specification

Part Number	Manufacturers	Description	Stock	Price
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	2499	1 $1.7585 10 $1.5002 25 $1.4846 100 $1.2358 250 $1.2346 500 $1.0489 1000 $0.8661
NE5517DR2G DISTI #	ON Semiconductor	IC OPAMP TRANSCOND 2MHZ 16SOIC RoHS: Compliant	2060	1 $1.93 10 $1.733 100 $1.3933 500 $1.14476 1000 $0.94852
NE5517DR2G DISTI #	ON Semiconductor	IC OPAMP TRANSCOND 2MHZ 16SOIC RoHS: Compliant	0	2500 $0.85738 5000 $0.82563 12500 $0.79388
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	35000	2500 $0.8057
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	2499	8 $1.7585 10 $1.5002 25 $1.4846 100 $1.2358 250 $1.2346 500 $1.0489 1000 $0.8661
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	0	2500 $0.8299 5000 $0.8239 10000 $0.8139 15000 $0.8029 25000 $0.7839
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	0	2500 $1.1259 5000 $0.9379 10000 $0.8659 15000 $0.8039 25000 $0.7509
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	0	2500 $0.78936 5000 $0.759 7500 $0.73089 12500 $0.70479 25000 $0.68048 62500 $0.6578 125000 $0.64702
NE5517DR2G DISTI #	ON Semiconductor	TRANSCONDUCTANCE AMPLIFIER, DUAL, SOIC16, No. of	0	1 $2.22 10 $1.95 25 $1.76 50 $1.58 100 $1.37 250 $1.18 500 $1.07 1000 $1.02
NE5517DR2G DISTI #	ON Semiconductor	NE5517DR2G, Dual Transconductance Op Amp, 2MHz P RoHS: Compliant	0	4 $0.944 8 $0.925 20 $0.897
NE5517DR2G DISTI #	ON Semiconductor	RoHS: Not Compliant	33566	1 $1.29 25 $1.19 100 $1.14 500 $1.1 1000 $1.04
NE5517DR2G DISTI #	ON Semiconductor	Transconductance Amplifiers Transconductance Dual RoHS: Compliant	4808	1 $1.87 10 $1.59 100 $1.28 500 $1.12 1000 $0.921 2500 $0.858 5000 $0.826 10000 $0.794
NE5517DG DISTI #	ON Semiconductor	Transconductance Amplifiers Transconductance Dual RoHS: Compliant	687	1 $1.44 10 $1.23 100 $0.94 500 $0.831 1000 $0.656 2500 $0.582 10000 $0.56
NE5517DR2 DISTI #	ON Semiconductor	Transconductance Amplifiers Transconductance RoHS: Not Compliant	0
NE5517DR2G DISTI #	ON Semiconductor	DUAL TRANSCONDUCTANCE AMPLIFIER SOIC16, RL	48	20 $1.17
NE5517DR2G DISTI #	ON Semiconductor	DUAL TRANSCONDUCTANCE AMPLIFIER SOIC16, PK	26	2 $1.375 20 $1.17
NE5517DR2G DISTI #	ON Semiconductor	SP Amp Transconductance Amplifier Dual ±22V/44V 16 RoHS: Compliant	2499	10 $1.5138 25 $1.4846 100 $1.2358 250 $1.2346
NE5517DR2G DISTI #	ON Semiconductor	TRANSCONDUCTANCE AMPLIFIER, DUAL, SOIC16 RoHS: Compliant	0	1 $1.48 25 $1.3 50 $1.18 100 $1.05 250 $0.953
NE5517DR2G DISTI #	ON Semiconductor	TRANSCONDUCTANCE AMPLIFIER, DUAL, SOIC16 RoHS: Compliant	0	1 $3.06 10 $2.75 100 $2.21 500 $1.82 1000 $1.51

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ON Semiconductor NE5517DR2G

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