ON Semiconductor MBRM110LT1G

Name: MBRM110LT1G
Brand: ON Semiconductor
SKU: 2421675-MBRM110LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBRM110LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2421675-MBRM110LT1G

Description:: DIODE SCHOTTKY 10V 1A POWERMITE

ECAD Model:

Datasheet:: MBRM110LT1G

Specifications

ON Semiconductor MBRM110LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRM110LT1G.

Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Factory Lead Time
7 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
DO-216AA
Surface Mount
YES
Number of Pins
2
Diode Element Material
SILICON
Manufacturer Package Identifier
CASE 457−04
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
ECCN Code
EAR99
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Voltage - Rated DC
10V
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBRM110
Pin Count
2
JESD-30 Code
R-PSSO-G1
Number of Elements
1
Polarity
Standard
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
500μA @ 10V
Output Current
1A
Voltage - Forward (Vf) (Max) @ If
365mV @ 1A
Case Connection
CATHODE
Forward Current
1A
Max Reverse Leakage Current
500μA
Operating Temperature - Junction
-55°C~125°C
Max Surge Current
50A
Halogen Free
Halogen Free
Breakdown Voltage
10V
Forward Voltage
365mV
Max Reverse Voltage (DC)
10V
Average Rectified Current
1A
Peak Reverse Current
500μA
Max Repetitive Reverse Voltage (Vrrm)
10V
Peak Non-Repetitive Surge Current
50A
Max Forward Surge Current (Ifsm)
50A
Height
1.15mm
Length
2.18mm
Width
2.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MBRM110LT1G Overview
In this device, the maximum reverse leakage current is 500μA volts.The average rectified current for this device is 1A volts.When the forward current reaches 1A, it is allowed.Having a current rating of 1A, it can carry an indefinite amount of current without deterioration.The maximum surge current is 50A.A data chart shows that the peak reverse is 500μA in the datasheets.Its breakdown voltage is 10V, which is the maximum reverse voltage that can be applied without exponentially increasing leakage current in the diode.

MBRM110LT1G Features
a maximal reverse leakage current of 500μA volts
an average rectified current of 1A volts
a current rating of 1A
the peak reverse is 500μA
the breakdown voltage of a diode is 10V

MBRM110LT1G Applications
There are a lot of ON Semiconductor
MBRM110LT1G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

MBRM110LT1G More Descriptions

ON Semi MBRM110LT1G, SMT Schottky Diode, 10V 2A, 2-Pin Powermite | ON Semiconductor MBRM110LT1G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 10V V(RRM), Silicon, DO-216AA
Diode Schottky 10V 1A Automotive 2-Pin(1 Tab) Power Mite T/R
MBRM110E Series 1 A 10 V Schottky Barrier Rectifier - POWERMITE-2
Diode Schottky 10V 1A 2-Pin(1 Tab) Power Mite T/R - Product that comes on tape, but is not reeled (A
SCHOTTKY DIODE, 1A FORWARD; Repetitive Reverse Voltage Vrrm Max: 10V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: DO-216AA; No. of Pi; Available until stocks are exhausted Alternative available
Schottky Rectifier, 1A, 10V, 457; Repetitive Peak Reverse Voltage:10V; Average Forward Current:1A; Diode Configuration:Single; Diode Case Style:Do-216Aa; No. Of Pins:2Pins; Forward Voltage Max:365Mv; Forward Surge Current:50A Rohs Compliant: Yes |Onsemi MBRM110LT1G

Product Comparison

The three parts on the right have similar specifications to MBRM110LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Manufacturer Package Identifier

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Breakdown Voltage

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Termination

Terminal Finish

Additional Feature

Terminal Position

Qualification Status

Application

Number of Phases

View Compare
MBRM110LT1G

ON Semiconductor

ACTIVE (Last Updated: 23 hours ago)

7 Weeks

Tin

Surface Mount

DO-216AA

YES

2

SILICON

CASE 457−04

Cut Tape (CT)

2005

e3

yes

Active

1 (Unlimited)

1

EAR99

125°C

-55°C

8541.10.00.80

Rectifier Diodes

10V

GULL WING

260

1A

40

MBRM110

2

R-PSSO-G1

1

Standard

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

500μA @ 10V

1A

365mV @ 1A

CATHODE

1A

500μA

-55°C~125°C

50A

Halogen Free

10V

365mV

10V

1A

500μA

10V

50A

50A

1.15mm

2.18mm

2.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
MBRM5100-13

Diodes Incorporated

-

-

-

Surface Mount

Powermite®3

-

3

SILICON

-

Tape & Reel (TR)

2002

e0

no

Discontinued

1 (Unlimited)

2

EAR99

125°C

-65°C

8541.10.00.80

Rectifier Diodes

100V

GULL WING

235

5A

10

MBRM5100

3

R-PSSO-G2

1

Standard

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 100V

5A

810mV @ 5A

CATHODE

5A

-

-65°C~125°C

-

-

-

900mV

100V

5A

200μA

100V

100A

100A

1.14mm

4.09mm

4.43mm

-

-

Non-RoHS Compliant

Contains Lead

Surface Mount

Through Hole

Tin/Lead (Sn/Pb)

LOW POWER LOSS, FREE WHEELING DIODE

SINGLE

Not Qualified

EFFICIENCY

1

MBRM110LT1G vs MBRM5100-13
MBRM110ET3G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

2 Weeks

-

Surface Mount

DO-216AA

YES

2

SILICON

-

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

1

EAR99

150°C

-55°C

8541.10.00.80

Rectifier Diodes

10V

GULL WING

260

1A

40

MBRM110

2

R-PSSO-G1

1

Standard

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1μA @ 10V

1A

530mV @ 1A

CATHODE

1A

1μA

-55°C~150°C

50A

Halogen Free

-

595mV

10V

1A

1μA

10V

50A

50A

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

Tin (Sn)

-

-

-

-

-

MBRM110LT1G vs MBRM110ET3G
MBRM560-13-F

Diodes Incorporated

-

-

-

Surface Mount

Powermite®3

-

3

SILICON

-

Tape & Reel (TR)

2012

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

125°C

-55°C

8541.10.00.80

Rectifier Diodes

60V

GULL WING

260

5A

40

MBRM560

3

R-PDSO-G2

1

Standard

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 60V

5A

690mV @ 5A

CATHODE

5A

-

-55°C~125°C

-

-

-

780mV

60V

5A

200μA

60V

100A

100A

1.14mm

4.09mm

4.43mm

-

No

ROHS3 Compliant

Lead Free

Surface Mount

-

Matte Tin (Sn)

LOW POWER LOSS, FREE WHEELING DIODE

DUAL

-

EFFICIENCY

1

MBRM110LT1G vs MBRM560-13-F