ON Semiconductor MBRD835LT4G

Name: MBRD835LT4G
Brand: ON Semiconductor
SKU: 2419748-MBRD835LT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MBRD835LT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2419748-MBRD835LT4G

Description:: DIODE SCHOTTKY 35V 8A DPAK

ECAD Model:

Datasheet:: MBRD835LT4G

Specifications

ON Semiconductor MBRD835LT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRD835LT4G.

Lifecycle Status
ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
Series
SWITCHMODE™
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Voltage - Rated DC
35V
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBRD835
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
Standard
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1.4mA @ 35V
Output Current
8A
Voltage - Forward (Vf) (Max) @ If
510mV @ 8A
Case Connection
CATHODE
Forward Current
8A
Max Reverse Leakage Current
1.4mA
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
75A
Application
POWER
Halogen Free
Halogen Free
Forward Voltage
510mV
Max Reverse Voltage (DC)
35V
Average Rectified Current
8A
Number of Phases
1
Peak Reverse Current
1.4mA
Max Repetitive Reverse Voltage (Vrrm)
35V
Peak Non-Repetitive Surge Current
75A
Max Forward Surge Current (Ifsm)
75A
Height
2.2606mm
Length
6.1976mm
Width
6.731mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MBRD835LT4G Overview
A reverse leakage current of 1.4mA volts can be generated by this device.A rectified current of 8A volts is averaged for this device.A value of 8A is the maximum forward current that can be allowed.This fuse has a current rating of 8A, which is the maximum current that will not deteriorate the fuse element over a long period.75A is the maximum value of surge current.As indicated by the data chart in the datasheets, the peak reverse is 1.4mA.

MBRD835LT4G Features
a maximal reverse leakage current of 1.4mA volts
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 1.4mA

MBRD835LT4G Applications
There are a lot of ON Semiconductor
MBRD835LT4G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

MBRD835LT4G More Descriptions

Diode; Schottky Barrier; Vr 35V; If 8A; Pkg D-PAK; Vf 0.51V; Tj 150C; Cs 75A; Ir 35mA
MBRD835LG Series 35 V 8 A Surface Mount Schottky Barrier Rectifier - TO-252-3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon
Diode Schottky 35V 8A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Schottky Barrier Rectifier, 35 V, 8.0 A
DIODE, SCHOTTKY, 8A, 35V, TO-252-3; Repetitive Reverse Voltage Vrrm Max: 35V; Forward Current If(AV): 8A; Diode Configuration: Single; Diode Case Style: TO-252; No. of Pins: 3Pins; Forward Voltage VF Max: 510mV; Forward Surge

Product Comparison

The three parts on the right have similar specifications to MBRD835LT4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Application

Halogen Free

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Terminal Position

Qualification Status

Configuration

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Rep Pk Reverse Voltage-Max

Non-rep Pk Forward Current-Max

Reach Compliance Code

Mount

Supplier Device Package

View Compare
MBRD835LT4G

ON Semiconductor

ACTIVE (Last Updated: 16 hours ago)

14 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

Cut Tape (CT)

SWITCHMODE™

2005

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

150°C

-65°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

35V

GULL WING

260

8A

40

MBRD835

3

R-PSSO-G2

1

Standard

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1.4mA @ 35V

8A

510mV @ 8A

CATHODE

8A

1.4mA

-65°C~150°C

75A

POWER

Halogen Free

510mV

35V

8A

1

1.4mA

35V

75A

75A

2.2606mm

6.1976mm

6.731mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
MBRD330T4

ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

-

SILICON

Tape & Reel (TR)

SWITCHMODE™

-

e0

no

Obsolete

1 (Unlimited)

2

-

-

-

-

FREE WHEELING DIODE

-

-

-

GULL WING

240

-

30

-

3

R-PSSO-G2

1

-

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 30V

-

600mV @ 3A

CATHODE

-

-

-65°C~150°C

-

POWER

-

-

-

-

1

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TIN LEAD

SINGLE

COMMERCIAL

SINGLE

3A

30V

3A

30V

75A

-

-

-

MBRD835LT4G vs MBRD330T4
MBRD320T4

ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

-

SILICON

Tape & Reel (TR)

SWITCHMODE™

-

e0

no

Obsolete

1 (Unlimited)

2

-

-

-

-

FREE WHEELING DIODE

-

-

-

GULL WING

240

-

30

-

3

R-PSSO-G2

1

-

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 20V

-

600mV @ 3A

CATHODE

-

-

-

-

POWER

-

-

-

-

1

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TIN LEAD

SINGLE

COMMERCIAL

SINGLE

3A

20V

3A

20V

75A

unknown

-

-

MBRD835LT4G vs MBRD320T4
MBRD330

ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

Tube

-

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

150°C

-40°C

-

-

-

-

-

-

-

-

MBRD330

-

-

-

-

Common Anode

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

200μA @ 30V

-

600mV @ 3A

-

-

200μA

-40°C~150°C

490A

-

-

-

30V

3A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

30V

3A

-

-

-

Surface Mount

D-Pak

MBRD835LT4G vs MBRD330