GeneSiC Semiconductor MBR7530R
- Part Number:
- MBR7530R
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2430747-MBR7530R
- Description:
- DIODE SCHOTTKY REV 30V DO5
- Datasheet:
- MBR7530R
GeneSiC Semiconductor MBR7530R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR7530R.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time10 Weeks
- MountChassis, Stud
- Mounting TypeChassis, Stud Mount
- Package / CaseDO-203AB, DO-5, Stud
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- JESD-30 CodeO-MUPM-D1
- Number of Elements1
- ConfigurationSINGLE
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky, Reverse Polarity
- Current - Reverse Leakage @ Vr1mA @ 30V
- Voltage - Forward (Vf) (Max) @ If750mV @ 75A
- Case ConnectionANODE
- Forward Current75A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current1kA
- ApplicationPOWER
- Max Reverse Voltage (DC)30V
- Average Rectified Current75A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)30V
- Natural Thermal Resistance1 °C/W
- RoHS StatusRoHS Compliant
MBR7530R Overview
Reverse leakage current from this device is 1μA volts at its maximum.For this device, the average rectified current is 75A volts.In this case, forward current can reach 75A.A thermal resistance value is the amount an object or material resists a heat flow to a given temperature difference, and its natural thermal resistance is 1 °C/W.Phase diode rectifier is possible to use a surge current of maximum value 1kA.Based on the data chart, the peak reverse is 1A.
MBR7530R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 75A volts
the peak reverse is 1A
MBR7530R Applications
There are a lot of GeneSiC Semiconductor
MBR7530R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Reverse leakage current from this device is 1μA volts at its maximum.For this device, the average rectified current is 75A volts.In this case, forward current can reach 75A.A thermal resistance value is the amount an object or material resists a heat flow to a given temperature difference, and its natural thermal resistance is 1 °C/W.Phase diode rectifier is possible to use a surge current of maximum value 1kA.Based on the data chart, the peak reverse is 1A.
MBR7530R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 75A volts
the peak reverse is 1A
MBR7530R Applications
There are a lot of GeneSiC Semiconductor
MBR7530R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR7530R More Descriptions
30V 75A DO-5 Silicon Stud Rectifier - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers 30V - 75A Schottky Rectifier
DIODE SCHOTTKY REV 30V 75A DO5
Schottky Rectifier, Single, 30V, 75A, Do-203Ab; Repetitive Peak Reverse Voltage:30V; Average Forward Current:75A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Product Range:-Rohs Compliant: Yes |Genesic Semiconductor MBR7530R
Schottky Diodes & Rectifiers 30V - 75A Schottky Rectifier
DIODE SCHOTTKY REV 30V 75A DO5
Schottky Rectifier, Single, 30V, 75A, Do-203Ab; Repetitive Peak Reverse Voltage:30V; Average Forward Current:75A; Forward Voltage Max:650Mv; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Product Range:-Rohs Compliant: Yes |Genesic Semiconductor MBR7530R
The three parts on the right have similar specifications to MBR7530R.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Natural Thermal ResistanceRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of PinsJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryPin CountElement ConfigurationPeak Non-Repetitive Surge CurrentRadiation HardeningVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:View Compare
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MBR7530RPRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2013yesActive1 (Unlimited)1150°C-65°CUPPERSOLDER LUGO-MUPM-D11SINGLEFast Recovery =< 500ns, > 200mA (Io)Schottky, Reverse Polarity1mA @ 30V750mV @ 75AANODE75A1μA-55°C~150°C1kAPOWER30V75A11A30V1 °C/WRoHS Compliant----------------------------
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PRODUCTION (Last Updated: 6 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AB, DO-5, StudSILICONBulk2002yesActive1 (Unlimited)1150°C-65°CUPPERSOLDER LUGO-MUPM-D11SINGLEFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 45V650mV @ 75ACATHODE75A1μA-55°C~150°C1kAPOWER45V75A11A45V1 °C/WRoHS CompliantNOT SPECIFIEDNOT SPECIFIEDMBR7545------------------------
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--Through HoleThrough HoleTO-220-2SILICONTube2011yesObsolete1 (Unlimited)2175°C-65°C---1-Fast Recovery =< 500ns, > 200mA (Io)Schottky50μA @ 35V630mV @ 7.5ACATHODE7.5A50μA-65°C~175°C150AEFFICIENCY35V7.5A150μA35V-ROHS3 Compliant---2e3EAR99Matte Tin (Sn)FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS8541.10.00.80Rectifier Diodes3Single150ANo-------------
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--------------------------------------------------840mV @ 15A35VTO-220-2Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-220-2-65°C ~ 175°CThrough HoleSchottky100µA @ 35V7.5A-
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