MBR40250G

ON Semiconductor MBR40250G

Part Number:
MBR40250G
Manufacturer:
ON Semiconductor
Ventron No:
2424725-MBR40250G
Description:
DIODE SCHOTTKY 250V 40A TO220-2
ECAD Model:
Datasheet:
MBR40250G

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Specifications
ON Semiconductor MBR40250G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBR40250G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    7 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Diode Element Material
    SILICON
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Voltage - Rated DC
    250V
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    40A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBR40250
  • Pin Count
    2
  • Number of Elements
    1
  • Polarity
    Standard
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    30μA @ 250V
  • Output Current
    40A
  • Voltage - Forward (Vf) (Max) @ If
    970mV @ 40A
  • Case Connection
    CATHODE
  • Forward Current
    40A
  • Max Reverse Leakage Current
    30μA
  • Operating Temperature - Junction
    -65°C~150°C
  • Max Surge Current
    150A
  • Application
    EFFICIENCY
  • Forward Voltage
    970mV
  • Max Reverse Voltage (DC)
    250V
  • Average Rectified Current
    40A
  • Number of Phases
    1
  • Reverse Recovery Time
    35 ns
  • Peak Reverse Current
    30μA
  • Max Repetitive Reverse Voltage (Vrrm)
    250V
  • Capacitance @ Vr, F
    500pF @ 5V 1MHz
  • Peak Non-Repetitive Surge Current
    150A
  • Max Forward Surge Current (Ifsm)
    150A
  • Recovery Time
    35 ns
  • Height
    9.27mm
  • Length
    10.29mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MBR40250G Overview
A reverse leakage current of 30μA volts can be generated by this device.A rectified current of 40A volts is averaged for this device.A value of 40A is the maximum forward current that can be allowed.This fuse has a current rating of 40A, which is the maximum current that will not deteriorate the fuse element over a long period.150A is the maximum value of surge current.As indicated by the data chart in the datasheets, the peak reverse is 30μA.

MBR40250G Features
a maximal reverse leakage current of 30μA volts
an average rectified current of 40A volts
a current rating of 40A
the peak reverse is 30μA


MBR40250G Applications
There are a lot of ON Semiconductor
MBR40250G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR40250G More Descriptions
ON Semi MBR40250G, Schottky Diode, 250V 40A, 35ns, 2-Pin TO-220AC | ON Semiconductor MBR40250G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 40A, 250V V(RRM), Silicon, TO-220AC
Schottky Power Rectifier, Switch-mode, 40 A, 250 V
DIODE SCHOTTKY 250V 40A TO220-2
The 250V 40A Schottky Rectifier minimizes the need for EMI filtering reduces switching losses and has soft recovery without reverse recovery oscillation.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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