MBR3535R

GeneSiC Semiconductor MBR3535R

Part Number:
MBR3535R
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2430693-MBR3535R
Description:
DIODE SCHOTTKY REV 35V DO4
ECAD Model:
Datasheet:
MBR3535R

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Specifications
GeneSiC Semiconductor MBR3535R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR3535R.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AA, DO-4, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • JESD-30 Code
    O-MUPM-D1
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    1.5mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    680mV @ 35A
  • Case Connection
    ANODE
  • Forward Current
    35A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    600A
  • Application
    POWER
  • Max Reverse Voltage (DC)
    35V
  • Average Rectified Current
    35A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    35V
  • Natural Thermal Resistance
    1.5 °C/W
  • RoHS Status
    RoHS Compliant
Description
MBR3535R Overview
Reverse leakage current from this device is 1μA volts at its maximum.For this device, the average rectified current is 35A volts.In this case, forward current can reach 35A.A thermal resistance value is the amount an object or material resists a heat flow to a given temperature difference, and its natural thermal resistance is 1.5 °C/W.Phase diode rectifier is possible to use a surge current of maximum value 600A.Based on the data chart, the peak reverse is 1A.

MBR3535R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 35A volts
the peak reverse is 1A


MBR3535R Applications
There are a lot of GeneSiC Semiconductor
MBR3535R applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR3535R More Descriptions
35V 35A DO-4 Silicon Stud Rectifier - Schottky (Reverse Configuration)
Bulk Chassis Stud Mount Schottky Reverse Polarity SINGLE Diode Schottky, Reverse Polarity 1.5C/W 35A 35V 150C
DIODE SCHOTTKY REV 35V 35A DO4
Schottky Rectifier, 35V, 35A, Do-203Aa; Repetitive Peak Reverse Voltage:35V; Average Forward Current:35A; Forward Voltage Max:680Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor MBR3535R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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