ON Semiconductor MBR10100G
- Part Number:
- MBR10100G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2824716-MBR10100G
- Description:
- DIODE SCHOTTKY 100V 10A TO220-2
- Datasheet:
- MBR10100G
ON Semiconductor MBR10100G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBR10100G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time11 Weeks
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-2
- Number of Pins2
- Supplier Device PackageTO-220-2
- Weight4.535924g
- PackagingTube
- SeriesSWITCHMODE™
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Voltage - Rated DC100V
- Current Rating10A
- Base Part NumberMBR10100
- PolarityStandard
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr100μA @ 100V
- Output Current10A
- Voltage - Forward (Vf) (Max) @ If800mV @ 10A
- Forward Current10A
- Max Reverse Leakage Current100μA
- Operating Temperature - Junction-65°C~175°C
- Max Surge Current150A
- Voltage - DC Reverse (Vr) (Max)100V
- Breakdown Voltage100V
- Current - Average Rectified (Io)10A
- Forward Voltage800mV
- Max Reverse Voltage (DC)100V
- Average Rectified Current10A
- Peak Reverse Current100μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- Peak Non-Repetitive Surge Current150A
- Max Forward Surge Current (Ifsm)150A
- Height15.748mm
- Length10.287mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MBR10100G Overview
Reverse leakage current is maximally zero volts with this device.This device's average rectified current is zero volts.A forward current of 10A is allowed.As for rectifiers current rating, rectifier is 10A, which is the maximum current a fuse can carry wrectifierhout too much degradation.Surge currents are limited to 150A.The datasheets show a peak reverse of 100μA, as shown in the data chart.Diodes define their breakdown voltage as the maximum reverse voltage that can be applied without increasing leakage current exponentially, and the breakdown voltage of a diode is 100V.
MBR10100G Features
a maximal reverse leakage current of 100μA volts
an average rectified current of 10A volts
a current rating of 10A
the peak reverse is 100μA
the breakdown voltage of a diode is 100V
MBR10100G Applications
There are a lot of ON Semiconductor
MBR10100G applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Reverse leakage current is maximally zero volts with this device.This device's average rectified current is zero volts.A forward current of 10A is allowed.As for rectifiers current rating, rectifier is 10A, which is the maximum current a fuse can carry wrectifierhout too much degradation.Surge currents are limited to 150A.The datasheets show a peak reverse of 100μA, as shown in the data chart.Diodes define their breakdown voltage as the maximum reverse voltage that can be applied without increasing leakage current exponentially, and the breakdown voltage of a diode is 100V.
MBR10100G Features
a maximal reverse leakage current of 100μA volts
an average rectified current of 10A volts
a current rating of 10A
the peak reverse is 100μA
the breakdown voltage of a diode is 100V
MBR10100G Applications
There are a lot of ON Semiconductor
MBR10100G applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MBR10100G More Descriptions
DIODE SCHOTTKY 100V 10A TO220-2 / Rectifier Diode Schottky 100V 10A 2-Pin(2 Tab) TO-220AC Rail
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC
Diode,Schottky Barrier,Vr 100V,If 10A,Pkg TO-220AC,Vf 0.8V,Tj 175degc,Cs 150A
Schottky Barrier Diode MBR10100G, ONS, TO-220 2-pin, 10A, 100V
Schottky Power Rectifier, Switch-mode, 10 A, 100 V
Diode Rectifier MBR10100G ON SEMI RoHS Ampere=100 V=100 TO220Halfin
Schottky Rectifier, 10A, 100V, To-220Ac; Repetitive Peak Reverse Voltage:100V; Average Forward Current:10A; Diode Configuration:Single; Diode Case Style:To-220Ac; No. Of Pins:2Pins; Forward Voltage Max:800Mv; Qualification:- Rohs Compliant: Yes |Onsemi MBR10100G.
...using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC
Diode,Schottky Barrier,Vr 100V,If 10A,Pkg TO-220AC,Vf 0.8V,Tj 175degc,Cs 150A
Schottky Barrier Diode MBR10100G, ONS, TO-220 2-pin, 10A, 100V
Schottky Power Rectifier, Switch-mode, 10 A, 100 V
Diode Rectifier MBR10100G ON SEMI RoHS Ampere=100 V=100 TO220Halfin
Schottky Rectifier, 10A, 100V, To-220Ac; Repetitive Peak Reverse Voltage:100V; Average Forward Current:10A; Diode Configuration:Single; Diode Case Style:To-220Ac; No. Of Pins:2Pins; Forward Voltage Max:800Mv; Qualification:- Rohs Compliant: Yes |Onsemi MBR10100G.
...using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following
The three parts on the right have similar specifications to MBR10100G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightPackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingBase Part NumberPolarityElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrOutput CurrentVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentVoltage - DC Reverse (Vr) (Max)Breakdown VoltageCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:MountDiode Element MaterialNumber of TerminationsECCN CodeAdditional FeatureHTS CodeSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsCase ConnectionApplicationNumber of PhasesView Compare
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MBR10100GACTIVE (Last Updated: 1 day ago)11 WeeksTinThrough HoleTO-220-22TO-220-24.535924gTubeSWITCHMODE™2004Active1 (Unlimited)175°C-65°C100V10AMBR10100StandardSingleFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 100V10A800mV @ 10A10A100μA-65°C~175°C150A100V100V10A800mV100V10A100μA100V150A150A15.748mm10.287mm4.826mmNo SVHCNoROHS3 CompliantLead Free------------------------------
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----------------------------------------------800mV @ 10A60VTO-220-2Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-220-2-65°C ~ 175°CThrough HoleSchottky100µA @ 60V10A-----------------
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----------------------------------------------840mV @ 20A45VTO-220-2Fast Recovery = 200mA (Io)SWITCHMODE™TubeTO-220-2-65°C ~ 175°CThrough HoleSchottky100µA @ 45V10A-----------------
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-10 Weeks-Through HoleTO-220-22--Tube-2015Active1 (Unlimited)150°C-65°C----SingleFast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 90V-800mV @ 10A10A--65°C~150°C-----90V10A100μA90V150A------ROHS3 Compliant--------------Through HoleSILICON2EAR99FREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80Rectifier DiodesNOT SPECIFIEDunknownNOT SPECIFIED3Not Qualified1CATHODEEFFICIENCY1
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