JANTXV1N5809US

Microsemi Corporation JANTXV1N5809US

Part Number:
JANTXV1N5809US
Manufacturer:
Microsemi Corporation
Ventron No:
2431254-JANTXV1N5809US
Description:
DIODE GEN PURP 100V 3A B-MELF
ECAD Model:
Datasheet:
JANTXV1N5809US

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Specifications
Microsemi Corporation JANTXV1N5809US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV1N5809US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/477
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY, METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    5W
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    5μA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 4A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    ULTRA FAST RECOVERY
  • Forward Voltage
    875mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    30 ns
  • Capacitance @ Vr, F
    60pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    125A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTXV1N5809US Overview
There is an average rectified current of 3A volts for this device.In terms of output current, 3A is the maximum value.

JANTXV1N5809US Features
an average rectified current of 3A volts
3A is the maximum value


JANTXV1N5809US Applications
There are a lot of Microsemi Corporation
JANTXV1N5809US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTXV1N5809US More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon
Rectifier Diode Switching 100V 6A 30ns 2-Pin E-MELF Bag
1N580XUS Series 100 V 6 A SMT Sealed Ultrafast Recovery Glass Rectifier - B MELF
SURFACE MOUNT VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS 2D-5B
DIODE GEN PURP 100V 3A B SQ-MELF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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