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JANTXV1N5551US

Microsemi Corporation JANTXV1N5551US

Part Number:
JANTXV1N5551US
Manufacturer:
Microsemi Corporation
Ventron No:
2431247-JANTXV1N5551US
Description:
DIODE GEN PURP 400V 3A B-MELF
ECAD Model:
Datasheet:
JANTXV1N5551US

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Specifications
Microsemi Corporation JANTXV1N5551US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV1N5551US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/420
  • Published
    1997
  • JESD-609 Code
    e0
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    235
  • Time@Peak Reflow Temperature-Max (s)
    20
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 400V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 9A
  • Case Connection
    ISOLATED
  • Forward Current
    5A
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    POWER
  • Current - Average Rectified (Io)
    3A
  • Forward Voltage
    1.2V
  • Number of Phases
    1
  • Reverse Recovery Time
    2 μs
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    400V
  • Peak Non-Repetitive Surge Current
    100A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTXV1N5551US Overview
There is no limit to the forward current value.Output current maximum is 3A.On the data sheets, the peak reverse is indicated by the data chart as 1μA.

JANTXV1N5551US Features
3A is the maximum value
the peak reverse is 1μA


JANTXV1N5551US Applications
There are a lot of Microsemi Corporation
JANTXV1N5551US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTXV1N5551US More Descriptions
Diode Standard Recovery Rectifier 400V 5A 2-Pin E-MELF
Std Rectifier _ B-Body Sq. Melf
Non-Compliant Surface Mount 2 5 A 1.2 V Production (Last Updated: 2 months ago) No 1 µA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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