JANTX1N6643US

Microsemi Corporation JANTX1N6643US

Part Number:
JANTX1N6643US
Manufacturer:
Microsemi Corporation
Ventron No:
3581836-JANTX1N6643US
Description:
DIODE GEN PURP 125V 300MA D5D
ECAD Model:
Datasheet:
JANTX1N6643US

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Specifications
Microsemi Corporation JANTX1N6643US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX1N6643US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, D
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/578
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.70
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Reference Standard
    MIL-19500/578E
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    50nA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 100mA
  • Case Connection
    ISOLATED
  • Forward Current
    300mA
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    0.3A
  • Voltage - DC Reverse (Vr) (Max)
    125V
  • Forward Voltage
    1.2V
  • Reverse Recovery Time
    6ns
  • Max Repetitive Reverse Voltage (Vrrm)
    50V
  • Capacitance @ Vr, F
    5pF @ 0V 1MHz
  • Peak Non-Repetitive Surge Current
    2.5A
  • Reverse Current-Max
    0.5μA
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX1N6643US Overview
In this case, forward current can reach 300mA.Whenever the reverse current is allowed to reach its maximum, 0.5μA is reached.0.3A represents the maximum output current.

JANTX1N6643US Features
A maximum reverse current of 0.5μA
0.3A is the maximum value


JANTX1N6643US Applications
There are a lot of Microsemi Corporation
JANTX1N6643US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTX1N6643US More Descriptions
Rectifier Diode Switching 50V 0.3A 6ns 2-Pin B-MELF Bag
Signal or Computer Diode _ D-5D
1N6643US Series 1.2 V 300 mA Surface Mount Zener Voltage Regulator
Diode Standard 125V 300mA Surface Mount D-5D
DIODE GEN PURP 400V 70A DO203AB
DIODE GEN PURP 125V 300MA D-5D
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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