Microsemi Corporation JANTX1N5809US
- Part Number:
- JANTX1N5809US
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2430599-JANTX1N5809US
- Description:
- DIODE GEN PURP 100V 3A B-MELF
- ECAD Model:
-
- Datasheet:
- JANTX1N5809US
Microsemi Corporation JANTX1N5809US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX1N5809US.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSQ-MELF, B
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/477
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY, METALLURGICALLY BONDED
- HTS Code8541.10.00.80
- Terminal PositionEND
- Terminal FormWRAP AROUND
- Pin Count2
- Reference StandardMIL-19500
- Qualification StatusQualified
- Number of Elements1
- Power Dissipation-Max5W
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr5μA @ 100V
- Voltage - Forward (Vf) (Max) @ If875mV @ 4A
- Case ConnectionISOLATED
- Operating Temperature - Junction-65°C~175°C
- Output Current-Max3A
- ApplicationULTRA FAST RECOVERY
- Forward Voltage875mV
- Max Reverse Voltage (DC)100V
- Average Rectified Current3A
- Number of Phases1
- Reverse Recovery Time30 ns
- Capacitance @ Vr, F60pF @ 10V 1MHz
- Peak Non-Repetitive Surge Current125A
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX1N5809US Overview
Devices with this rating have an average rectified current of 3A volts.There is no maximum output current when the value is 3A.
JANTX1N5809US Features
an average rectified current of 3A volts
3A is the maximum value
JANTX1N5809US Applications
There are a lot of Microsemi Corporation
JANTX1N5809US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
Devices with this rating have an average rectified current of 3A volts.There is no maximum output current when the value is 3A.
JANTX1N5809US Features
an average rectified current of 3A volts
3A is the maximum value
JANTX1N5809US Applications
There are a lot of Microsemi Corporation
JANTX1N5809US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTX1N5809US More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon
Rectifier Diode Switching 100V 6A 30ns 2-Pin E-MELF Bag
1N5809US Series 100V 3 A Voidless Hermetically Seal Ultrafast Recovery Rectifier
SURFACE MOUNT VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS 2D-5B
DIODE GEN PURP 100V 3A B SQ-MELF
DIODE GEN PURP 50V 300MA AXIAL
Rectifier Diode Switching 100V 6A 30ns 2-Pin E-MELF Bag
1N5809US Series 100V 3 A Voidless Hermetically Seal Ultrafast Recovery Rectifier
SURFACE MOUNT VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS 2D-5B
DIODE GEN PURP 100V 3A B SQ-MELF
DIODE GEN PURP 50V 300MA AXIAL
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