JANTX1N5806US

Microsemi Corporation JANTX1N5806US

Part Number:
JANTX1N5806US
Manufacturer:
Microsemi Corporation
Ventron No:
2419931-JANTX1N5806US
Description:
DIODE GEN PURP 150V 1A D5A
ECAD Model:
Datasheet:
JANTX1N5806US

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Specifications
Microsemi Corporation JANTX1N5806US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX1N5806US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/477
  • Published
    1997
  • JESD-609 Code
    e0
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Pin Count
    2
  • Reference Standard
    MIL-19500/477F
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 150V
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 1A
  • Case Connection
    ISOLATED
  • Forward Current
    2.5A
  • Operating Temperature - Junction
    -65°C~175°C
  • Application
    ULTRA FAST RECOVERY POWER
  • Forward Voltage
    975mV
  • Max Reverse Voltage (DC)
    150V
  • Average Rectified Current
    1A
  • Number of Phases
    1
  • Reverse Recovery Time
    25 ns
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    150V
  • Capacitance @ Vr, F
    25pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    35A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX1N5806US Overview
Devices like this have an average rectified current of 1A volts.There is no limit to the forward current value.On the data sheets, the peak reverse is indicated by the data chart as 1μA.

JANTX1N5806US Features
an average rectified current of 1A volts
the peak reverse is 1μA


JANTX1N5806US Applications
There are a lot of Microsemi Corporation
JANTX1N5806US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTX1N5806US More Descriptions
Rectifier Diode Switching 150V 2.5A 25ns 2-Pin A-MELF Bag / DIODE GEN PURP 150V 1A D5A
Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon
JANTX Series 150 V 1 A A-MELF Ultra Fast Recovery Diode Rectifier
Diode Ultra Fast Recovery 150V 1A 2-Pin Case A Bag
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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