JANTX1N5420US

Microsemi Corporation JANTX1N5420US

Part Number:
JANTX1N5420US
Manufacturer:
Microsemi Corporation
Ventron No:
2431218-JANTX1N5420US
Description:
DIODE GEN PURP 600V 3A D5B
ECAD Model:
Datasheet:
JANTX1N5420US

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Specifications
Microsemi Corporation JANTX1N5420US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX1N5420US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/411
  • Published
    1997
  • JESD-609 Code
    e0
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    235
  • Time@Peak Reflow Temperature-Max (s)
    20
  • Pin Count
    2
  • Reference Standard
    MIL-19500/411L
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 600V
  • Voltage - Forward (Vf) (Max) @ If
    1.5V @ 9A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    FAST RECOVERY POWER
  • Forward Voltage
    1.5V
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    400 ns
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Peak Non-Repetitive Surge Current
    80A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX1N5420US Overview
There is an average rectified current of 3A volts for this device.In terms of output current, 3A is the maximum value.In the datasheets, the peak reverse is 1μA, as indicated by the data chart.

JANTX1N5420US Features
an average rectified current of 3A volts
3A is the maximum value
the peak reverse is 1μA


JANTX1N5420US Applications
There are a lot of Microsemi Corporation
JANTX1N5420US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JANTX1N5420US More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon
Rectifier Diode Switching 600V 3A 400ns 2-Pin E-MELF Bag
1N5420US Series Military 600 V 400 ns Sealed Glass Fast Recovery Rectifier - D5B
Non-Compliant Surface Mount MELF 2 1.5 V Production (Last Updated: 2 months ago) No
RECTIFIER MODULE - FAST RECOVERY/FRED
SIC SCHOTTKY 40A, 650V TO-247AD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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