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JAN1N6630US

Microsemi Corporation JAN1N6630US

Part Number:
JAN1N6630US
Manufacturer:
Microsemi Corporation
Ventron No:
2828118-JAN1N6630US
Description:
DIODE GEN PURP 900V 1.4A E-MELF
ECAD Model:
Datasheet:
JAN1N6630US

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Specifications
Microsemi Corporation JAN1N6630US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N6630US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Contact Plating
    Lead, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, E
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/590
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Reference Standard
    MIL-19500/590F
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    2μA @ 900V
  • Voltage - Forward (Vf) (Max) @ If
    1.4V @ 1.4A
  • Case Connection
    ISOLATED
  • Forward Current
    1.4A
  • Operating Temperature - Junction
    -65°C~150°C
  • Output Current-Max
    3A
  • Application
    ULTRA FAST RECOVERY POWER
  • Voltage - DC Reverse (Vr) (Max)
    900V
  • Number of Phases
    1
  • Reverse Recovery Time
    50ns
  • Max Repetitive Reverse Voltage (Vrrm)
    990V
  • RoHS Status
    Non-RoHS Compliant
Description
JAN1N6630US Overview
Forward current may not exceed 1.4A.Output current is maximal at 3A.

JAN1N6630US Features
3A is the maximum value


JAN1N6630US Applications
There are a lot of Microsemi Corporation
JAN1N6630US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N6630US More Descriptions
Diode Switching 990V 1.4A 2-Pin E-MELF
UFR,FRR _ B-Body Sq. Melf
DIODE GEN PURP 900V 1.4A E-MELF
DIODE GEN PURP 880V 1.4A D5B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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