Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > JAN1N5807US
JAN1N5807US

Microsemi Corporation JAN1N5807US

Part Number:
JAN1N5807US
Manufacturer:
Microsemi Corporation
Ventron No:
2430576-JAN1N5807US
Description:
DIODE GEN PURP 50V 6A B-MELF
ECAD Model:
Datasheet:
JAN1N5807US

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation JAN1N5807US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5807US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/477
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Pin Count
    2
  • Reference Standard
    MIL-19500/477
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    5W
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    5μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 4A
  • Case Connection
    ISOLATED
  • Forward Current
    6A
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    ULTRA FAST RECOVERY
  • Max Reverse Voltage (DC)
    50V
  • Average Rectified Current
    6A
  • Number of Phases
    1
  • Reverse Recovery Time
    30 ns
  • Peak Reverse Current
    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    50V
  • Capacitance @ Vr, F
    60pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    125A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN1N5807US Overview
Devices like this have an average rectified current of 6A volts.There is no limit to the forward current value.Output current maximum is 3A.On the data sheets, the peak reverse is indicated by the data chart as 5μA.

JAN1N5807US Features
an average rectified current of 6A volts
3A is the maximum value
the peak reverse is 5μA


JAN1N5807US Applications
There are a lot of Microsemi Corporation
JAN1N5807US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N5807US More Descriptions
Ufr,frr B-Body Sq. Melf Rohs Compliant: Yes |Microchip JAN1N5807US
Diode Switching 50V 6A 2-Pin E-MELF
DIODE GEN PURP 50V 6A B SQ-MELF
DIODE GEN PURP 600V 70A DO203AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.