JAN1N5804

Microsemi Corporation JAN1N5804

Part Number:
JAN1N5804
Manufacturer:
Microsemi Corporation
Ventron No:
2431281-JAN1N5804
Description:
DIODE GEN PURP 100V 2.5A AXIAL
ECAD Model:
Datasheet:
1N5802, 1N5804, 1N5806

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Specifications
Microsemi Corporation JAN1N5804 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5804.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 2 weeks ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    A, Axial
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/477
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Technology
    AVALANCHE
  • Terminal Form
    WIRE
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    3W
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    975mV @ 2.5A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Application
    ULTRA FAST RECOVERY POWER
  • Forward Voltage
    975mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    2.5A
  • Number of Phases
    1
  • Reverse Recovery Time
    25 ns
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Capacitance @ Vr, F
    25pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    35A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JAN1N5804 Overview
The average rectified current for this device is 2.5A volts.A data chart shows that the peak reverse is 1μA in the datasheets.

JAN1N5804 Features
an average rectified current of 2.5A volts
the peak reverse is 1μA


JAN1N5804 Applications
There are a lot of Microsemi Corporation
JAN1N5804 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N5804 More Descriptions
Rectifier Diode Switching 100V 2.5A 25ns 2-Pin Case A Bag
JAN Series 100 V 2.5 A Through Hole Ultrafast Recovery Glass Rectifier
DIODE SCHOTTKY 650V 30A TO220-2
Ultra Fast Rectifier (less than 100ns)
DIODE GEN PURP 100V 2.5A AXIAL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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