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JAN1N5551US

Microsemi Corporation JAN1N5551US

Part Number:
JAN1N5551US
Manufacturer:
Microsemi Corporation
Ventron No:
2430710-JAN1N5551US
Description:
DIODE GEN PURP 400V 3A B-MELF
ECAD Model:
Datasheet:
JAN1N5551US

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Specifications
Microsemi Corporation JAN1N5551US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5551US.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/420
  • Published
    1997
  • JESD-609 Code
    e0
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    235
  • Time@Peak Reflow Temperature-Max (s)
    20
  • Pin Count
    2
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 400V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 9A
  • Case Connection
    ISOLATED
  • Forward Current
    5A
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    3A
  • Application
    POWER
  • Current - Average Rectified (Io)
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    2 μs
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    400V
  • Peak Non-Repetitive Surge Current
    100A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN1N5551US Overview
In this case, forward current can reach 5A.3A represents the maximum output current.Based on the data chart, the peak reverse is 1μA.

JAN1N5551US Features
3A is the maximum value
the peak reverse is 1μA


JAN1N5551US Applications
There are a lot of Microsemi Corporation
JAN1N5551US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N5551US More Descriptions
Diode Switching 400V 5A 2-Pin E-MELF
UFR,FRR _ B-Body Sq. Melf
DIODE GEN PURP 400V 3A B-MELF
DIODE GEN PURP 100V 3A AXIAL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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