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JAN1N5527B-1

Microsemi Corporation JAN1N5527B-1

Part Number:
JAN1N5527B-1
Manufacturer:
Microsemi Corporation
Ventron No:
2451769-JAN1N5527B-1
Description:
DIODE ZENER 7.5V 500MW DO35
ECAD Model:
Datasheet:
JAN1N5527B-1

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Specifications
Microsemi Corporation JAN1N5527B-1 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N5527B-1.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    DO-204AH, DO-35, Axial
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Operating Temperature
    -65°C~175°C
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/437
  • Published
    1999
  • Tolerance
    ±5%
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.50
  • Max Power Dissipation
    500mW
  • Technology
    ZENER
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Polarity
    UNIDIRECTIONAL
  • Element Configuration
    Single
  • Diode Type
    ZENER DIODE
  • Current - Reverse Leakage @ Vr
    500nA @ 6.8V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 200mA
  • Case Connection
    ISOLATED
  • Max Reverse Leakage Current
    500nA
  • Impedance-Max
    35Ohm
  • Reference Voltage
    7.5V
  • Zener Voltage
    7.5V
  • Voltage Tol-Max
    5%
  • Working Test Current
    1mA
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN1N5527B-1 Overview
A reverse leakage current of 500nA @ 6.8V is required to supply this electrical device.Voltage (Tol) is limited to 5%.500nA is the maximum reverse leakage current.To operate this device, set the working test voltage to 1mA.1.1V @ 200mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

JAN1N5527B-1 Features
reverse leakage current of 500nA @ 6.8V
500nA @ 6.8V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA
the working test voltage to 1mA
minimal dynamic impedance is 1mA


JAN1N5527B-1 Applications
There are a lot of Microsemi Corporation
JAN1N5527B-1 applications of zener single diodes.



JAN1N5527B-1 More Descriptions
Low Voltage Avalanche Zener Diode 7.5V 500mW 2-Pin DO-35
Voltage Regulator _ DO-35
DIODE ZENER 7.5V 500MW DO35
Product Comparison
The three parts on the right have similar specifications to JAN1N5527B-1.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Tolerance
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Max Power Dissipation
    Technology
    Terminal Form
    Pin Count
    Reference Standard
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Max Reverse Leakage Current
    Impedance-Max
    Reference Voltage
    Zener Voltage
    Voltage Tol-Max
    Working Test Current
    Radiation Hardening
    RoHS Status
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Power Dissipation-Max
    Power - Max
    Voltage - Zener (Nom) (Vz)
    Power Dissipation
    Test Current
    Voltage Tolerance
    View Compare
  • JAN1N5527B-1
    JAN1N5527B-1
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    14 Weeks
    Through Hole
    Through Hole
    DO-204AH, DO-35, Axial
    2
    SILICON
    -65°C~175°C
    Bulk
    Military, MIL-PRF-19500/437
    1999
    ±5%
    e0
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    METALLURGICALLY BONDED
    8541.10.00.50
    500mW
    ZENER
    WIRE
    2
    MIL-19500
    Qualified
    1
    UNIDIRECTIONAL
    Single
    ZENER DIODE
    500nA @ 6.8V
    1.1V @ 200mA
    ISOLATED
    500nA
    35Ohm
    7.5V
    7.5V
    5%
    1mA
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN1N3018CUR-1
    JAN1N3018CUR-1
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    14 Weeks
    -
    Surface Mount
    DO-213AB, MELF (Glass)
    -
    SILICON
    -55°C~175°C
    Bulk
    Military, MIL-PRF-19500/115
    1999
    ±2%
    e0
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    METALLURGICALLY BONDED
    8541.10.00.50
    -
    ZENER
    WRAP AROUND
    2
    MIL-19500/115K
    Qualified
    1
    UNIDIRECTIONAL
    -
    ZENER DIODE
    150μA @ 5.2V
    1.2V @ 200mA
    ISOLATED
    -
    4.5Ohm
    8.2V
    -
    2%
    31mA
    -
    Non-RoHS Compliant
    YES
    END
    NOT SPECIFIED
    NOT SPECIFIED
    O-LELF-R2
    SINGLE
    1W
    1W
    8.2V
    -
    -
    -
    JAN1N5527B-1 vs JAN1N3018CUR-1
  • JAN1N3009B
    JAN1N3009B
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    -
    Stud
    Stud Mount
    DO-203AA, DO-4, Stud
    2
    SILICON
    -65°C~175°C
    Bulk
    Military, MIL-PRF-19500/124
    1999
    ±5%
    e0
    no
    Discontinued
    1 (Unlimited)
    1
    EAR99
    Tin/Lead (Sn/Pb)
    -
    8541.10.00.50
    10W
    ZENER
    SOLDER LUG
    1
    -
    Qualified
    1
    UNIDIRECTIONAL
    Single
    ZENER DIODE
    10μA @ 98.8V
    1.5V @ 2A
    -
    10μA
    100Ohm
    130V
    130V
    5%
    -
    No
    Non-RoHS Compliant
    -
    UPPER
    -
    -
    O-MUPM-D1
    -
    -
    -
    -
    10W
    19mA
    5%
    JAN1N5527B-1 vs JAN1N3009B
  • JAN1N2813B
    JAN1N2813B
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    -
    Through Hole
    Through Hole
    TO-204AD
    -
    SILICON
    -65°C~175°C
    Bulk
    Military, MIL-PRF-19500/114
    1999
    ±5%
    e0
    no
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
    -
    8541.10.00.50
    50W
    ZENER
    PIN/PEG
    2
    MIL-19500/114
    Qualified
    1
    UNIDIRECTIONAL
    Single
    ZENER DIODE
    10μA @ 11.4V
    1.5V @ 10A
    -
    10μA
    1.4Ohm
    15V
    15V
    5%
    -
    No
    Non-RoHS Compliant
    -
    BOTTOM
    -
    -
    O-MBFM-P2
    -
    -
    -
    -
    50W
    830mA
    5%
    JAN1N5527B-1 vs JAN1N2813B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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