JAN1N3600

Microsemi Corporation JAN1N3600

Part Number:
JAN1N3600
Manufacturer:
Microsemi Corporation
Ventron No:
2431021-JAN1N3600
Description:
DIODE GEN PURP 50V 200MA DO7
ECAD Model:
Datasheet:
JAN1N3600

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Specifications
Microsemi Corporation JAN1N3600 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN1N3600.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    DO-204AA, DO-7, Axial
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/231
  • Published
    1999
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn63Pb37)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.70
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    0.5W
  • Element Configuration
    Single
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    100nA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 200mA
  • Case Connection
    ISOLATED
  • Forward Current
    300mA
  • Operating Temperature - Junction
    -65°C~175°C
  • Current - Average Rectified (Io)
    200mA DC
  • Forward Voltage
    1V
  • Reverse Recovery Time
    4 ns
  • Peak Reverse Current
    100nA
  • Max Repetitive Reverse Voltage (Vrrm)
    50V
  • Peak Non-Repetitive Surge Current
    4A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JAN1N3600 Overview
A value of 300mA is the maximum forward current that can be allowed.As indicated by the data chart in the datasheets, the peak reverse is 100nA.

JAN1N3600 Features
the peak reverse is 100nA


JAN1N3600 Applications
There are a lot of Microsemi Corporation
JAN1N3600 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
JAN1N3600 More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-7
Rectifier Diode Switching 50V 0.2A 4ns 2-Pin DO-7 Bag
Signal or Computer Diode _ DO-35
1N3600 Series 50 V 0.3 A 500 mW Axial Through Hole Switching Diode - DO-7
Diode Switching 50V 0.3A 2-Pin DO-7
Product Description Demo for Development.
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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