Fairchild/ON Semiconductor ISL9R3060G2

Name: ISL9R3060G2
Brand: Fairchild/ON Semiconductor
SKU: 2422070-ISL9R3060G2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: ISL9R3060G2

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2422070-ISL9R3060G2

Description:: DIODE GEN PURP 600V 30A TO247

ECAD Model:

Datasheet:: ISL9R3060G2

Specifications

Fairchild/ON Semiconductor ISL9R3060G2 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor ISL9R3060G2.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-2
Number of Pins
2
Weight
6.33g
Diode Element Material
SILICON
Packaging
Tube
Series
Stealth™
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Additional Feature
FREEWHEELING DIODE, SNUBBER DIODE
HTS Code
8541.10.00.80
Capacitance
120pF
Subcategory
Rectifier Diodes
Voltage - Rated DC
600V
Technology
AVALANCHE
Current Rating
30A
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
100μA @ 600V
Power Dissipation
200W
Output Current
30A
Voltage - Forward (Vf) (Max) @ If
2.4V @ 30A
Case Connection
CATHODE
Forward Current
30A
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
325A
Application
FAST SOFT RECOVERY
Forward Voltage
2.4V
Max Reverse Voltage (DC)
600V
Average Rectified Current
30A
Number of Phases
1
Reverse Recovery Time
45 ns
Peak Reverse Current
100μA
Max Repetitive Reverse Voltage (Vrrm)
600V
Peak Non-Repetitive Surge Current
325A
Reverse Voltage
600V
Max Forward Surge Current (Ifsm)
325A
Recovery Time
45 ns
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

ISL9R3060G2 Overview
A reasonable reverse voltage is 600V.The average rectified current for this device is 30A volts.The primary action of this electronic or electrical device produces no heat as an unwanted side effect.When the forward current reaches 30A, it is allowed.Having a current rating of 30A, it can carry an indefinite amount of current without deterioration.The maximum surge current is 325A.This device can deliver a value of 120pF depending on the capacitance.A data chart shows that the peak reverse is 100μA in the datasheets.

ISL9R3060G2 Features
an average rectified current of 30A volts
a current rating of 30A
the peak reverse is 100μA

ISL9R3060G2 Applications
There are a lot of ON Semiconductor
ISL9R3060G2 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

ISL9R3060G2 More Descriptions

Diode Ultra Fast Recovery Rectifier 600V 30A 2-Pin (2 Tab) TO-247 Rail
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247
ISL9 Series Single 600 V 30 A 35 ns Through Hole Stealth Diode - TO-247-2
DIODE, FAST, 30A, 600V, TO-247; Diode Type:Fast Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):30A; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:45ns; Forward Surge Current Ifsm Max:325A; Diode Case Style:TO-247; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifrm:70A; Current Ifsm:325A; Forward Voltage:2.4V; Junction Temperature Tj Max:175°C; Package / Case:TO-247; Reverse Recovery Time trr Typ:35ns; Termination Type:Through Hole
The ISL9R3060G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Certification