IXYS IRFP254

Name: IRFP254
Brand: IXYS
SKU: 5524133-IRFP254
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFP254

Manufacturer:: IXYS

Ventron No:: 5524133-IRFP254

Description:: High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

ECAD Model:

Datasheet:: IRFP254

Description

The IRFP254 is High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series , it is part of series. they are designed to work as Transistor.IRFP254 with pin details manufactured by IXYS Corporation. The IRFP254 is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Transistor.it is with Operating Temperature .IRFP254 with original stock manufactured by IXYS Corporation. The IRFP254 is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of IRFP254is designed to work in , it's Operating Temperature is .The IRFP254 is available in Package, is part of the Transistor and belong to RF Semiconductors.IRFP254 with EDA / CAD Models manufactured by IXYS Corporation. The IRFP254 is available in Package, is part of the RF Semiconductors.The IRFP254 is Transistor with package manufactured by IXYS Corporation. The IRFP254 is available in Package, is part of the High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series.

IRFP254 More Descriptions

Trans MOSFET N-CH 250V 23A 3-Pin(3 Tab) TO-247AC
Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:23A; On-Resistance, Rds(on):140mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC; Drain Source On Resistance @ 10V:140mohm RoHS Compliant: No
MOSFET, N TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:23A; Resistance, Rds On:0.14ohm; Case Style:TO-247AC; Current, Idm Pulse:92A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:190W; Power, Pd:190W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:250V

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