Intersil HUF75925P3

Name: HUF75925P3
Brand: Intersil
SKU: 6280076-HUF75925P3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: HUF75925P3

Manufacturer:: Intersil

Ventron No:: 6280076-HUF75925P3

Description:

ECAD Model:

Datasheet:: HUF75925P3

Specifications

Intersil HUF75925P3 technical specifications, attributes, parameters and parts with similar specifications to Intersil HUF75925P3.

Surface Mount
NO
Number of Terminals
3
Transistor Element Material
SILICON
ECCN Code
EAR99
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.275Ohm
DS Breakdown Voltage-Min
200V
FET Technology
METAL-OXIDE SEMICONDUCTOR

Description

HUF75925P3 Overview
This product is manufactured by Intersil and belongs to the category of Housingless Welding Diode. The images we provide are for reference only, for detailed product information please see specification sheet HUF75925P3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of HUF75925P3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

HUF75925P3 More Descriptions

Power Field-Effect Transistor, 11A I(D), 200V, 0.275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
N-CHANNEL POWER MOSFET
Not available to order .
MISCELLANEOUS MOSFETS;

Product Comparison

The three parts on the right have similar specifications to HUF75925P3.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

ECCN Code

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Technology

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

View Compare
HUF75925P3

Intersil

NO

3

SILICON

EAR99

SINGLE

THROUGH-HOLE

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

TO-220AB

11A

0.275Ohm

200V

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
HUF75329D3S

FAIRCHILD

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-252AA

UltraFET™

26 mOhm @ 20A, 10V

128W (Tc)

Tube

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

1060pF @ 25V

65nC @ 20V

N-Channel

-

10V

55V

N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA

20A (Tc)

HUF75925P3 vs HUF75329D3S
HUF75321D3S

HARRIS

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-252AA

UltraFET™

36 mOhm @ 20A, 10V

93W (Tc)

Tube

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

680pF @ 25V

44nC @ 20V

N-Channel

-

10V

55V

N-Channel 55V 20A (Tc) 93W (Tc) Surface Mount TO-252AA

20A (Tc)

HUF75925P3 vs HUF75321D3S
HUF75343G3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-247

UltraFET™

9 mOhm @ 75A, 10V

270W (Tc)

Tube

TO-247-3

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

Lead free / RoHS Compliant

3000pF @ 25V

205nC @ 20V

N-Channel

-

10V

55V

N-Channel 55V 75A (Tc) 270W (Tc) Through Hole TO-247

75A (Tc)

HUF75925P3 vs HUF75343G3