Fairchild/ON Semiconductor GBU8M
- Part Number:
- GBU8M
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2411930-GBU8M
- Description:
- RECT BRIDGE GPP 8A 1000V GBU
- Datasheet:
- GBU8A Thru GBU8M
Fairchild/ON Semiconductor GBU8M technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor GBU8M.
- Voltage - Peak Reverse (Max):1000V
- Voltage - Forward (Vf) (Max) @ If:1V @ 8A
- Technology:Standard
- Supplier Device Package:GBU
- Series:-
- Packaging:Tube
- Package / Case:4-SIP, GBU
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Diode Type:Single Phase
- Current - Reverse Leakage @ Vr:5µA @ 1000V
- Current - Average Rectified (Io):8A
Images are for reference only.See Product Specifications for product details.If you are interested to buy GBU8M.
GBU8M More Descriptions
Diode Rectifier Bridge Single 1KV 8A 4-Pin Case GBU Rail
GBU8M Series 6 A 1000 V Through Hole Glass Passivated Bridge Rectifier - GBU-4
BRIDGE RECTIFIER; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):8A; Forward Voltage VF Max:1V; Power Dissipation Pd:16W; Diode Mounting Type:Through Hole; Bridge Rectifier Case Style:GBU; No. of Pins:4; SVHC:No SVHC (18-Jun-2012); Package / Case:GBU; Termination Type:Through Hole
GBU8M Series 6 A 1000 V Through Hole Glass Passivated Bridge Rectifier - GBU-4
BRIDGE RECTIFIER; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):8A; Forward Voltage VF Max:1V; Power Dissipation Pd:16W; Diode Mounting Type:Through Hole; Bridge Rectifier Case Style:GBU; No. of Pins:4; SVHC:No SVHC (18-Jun-2012); Package / Case:GBU; Termination Type:Through Hole
The three parts on the right have similar specifications to GBU8M.
-
ImagePart NumberManufacturerVoltage - Peak Reverse (Max):Voltage - Forward (Vf) (Max) @ If:Technology:Supplier Device Package:Series:Packaging:Package / Case:Operating Temperature:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Factory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsConfigurationDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOutput Current-MaxCurrent - Average Rectified (Io)Number of PhasesNon-rep Pk Forward Current-MaxVoltage - Peak Reverse (Max)Breakdown Voltage-MinRoHS StatusSupplier Device PackageSeriesView Compare
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GBU8M1000V1V @ 8AStandardGBU-Tube4-SIP, GBU-55°C ~ 150°C (TJ)Through HoleSingle Phase5µA @ 1000V8A-----------------------------------
-
------------12 WeeksThrough HoleThrough Hole4-SIP, GBUSILICON-55°C~150°C TJBulk2015Active1 (Unlimited)4EAR99UL RECOGNIZED8541.10.00.80Bridge Rectifier DiodesStandardNOT SPECIFIEDNOT SPECIFIEDGBU802R-PSFM-T44BRIDGE, 4 ELEMENTSSingle Phase10μA @ 200V1V @ 4A8A8A1200A200V200VROHS3 Compliant--
-
------------10 Weeks-Through Hole4-SIP, GBU--55°C~150°C TJTube2017Active1 (Unlimited)-----Standard------Single Phase5μA @ 1000V1.1V @ 8A-8A--1kV-ROHS3 CompliantGBUAutomotive, AEC-Q101
-
------------10 Weeks-Through Hole4-SIP, GBU--55°C~150°C TJTube2017Active1 (Unlimited)-----Standard------Single Phase5μA @ 100V1.1V @ 8A-8A--100V-ROHS3 CompliantGBUAutomotive, AEC-Q101
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