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FES16GT-E3/45

Vishay Semiconductor Diodes Division FES16GT-E3/45

Part Number:
FES16GT-E3/45
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
3063539-FES16GT-E3/45
Description:
DIODE GEN PURP 400V 16A TO220AC
ECAD Model:
Datasheet:
FES16GT-E3/45

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Specifications
Vishay Semiconductor Diodes Division FES16GT-E3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division FES16GT-E3/45.
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Tube
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Base Part Number
    FES16G
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 400V
  • Voltage - Forward (Vf) (Max) @ If
    1.3V @ 16A
  • Case Connection
    CATHODE
  • Forward Current
    16A
  • Operating Temperature - Junction
    -65°C~150°C
  • Max Surge Current
    250A
  • Application
    EFFICIENCY
  • Forward Voltage
    1.3V
  • Max Reverse Voltage (DC)
    400V
  • Average Rectified Current
    16A
  • Number of Phases
    1
  • Reverse Recovery Time
    50 ns
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    400V
  • Peak Non-Repetitive Surge Current
    250A
  • Reverse Voltage
    400V
  • Recovery Time
    50 ns
  • Height
    15.32mm
  • Length
    10.54mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FES16GT-E3/45 Overview
The reverse voltage should be 400V.In this device, there is an average rectified current of 16A volts.Forward current may not exceed 16A.This is the maximum amount of 250A surge current that can be used.As the data chart indicates, the peak reverse is 10μA.

FES16GT-E3/45 Features
an average rectified current of 16A volts
the peak reverse is 10μA


FES16GT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
FES16GT-E3/45 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
FES16GT-E3/45 More Descriptions
Diode Ultra Fast Recovery Rectifier 400V 16A 2-Pin (2 Tab) TO-220AC Tube
Rectifier Diode, 1 Phase, 1 Element, 16A, 400V V(RRM), Silicon, TO-220AC
FES16GT-E3/45, Diode, 400V 16A, 50ns, 2-Pin TO-220AC | Siliconix / Vishay FES16GT-E3/45
FES16GT 400 V 50 ns Through Hole Ultrafast Plastic Rectifier - TO-220AC
Diode; Diode Type:Fast Recovery; Repetitive Reverse Voltage Max, Vrrm:400V; Forward Current, If(AV):16A; Forward Surge Current Max, Ifsm:250A; Reverse Recovery Time, trr:50ns; Forward Voltage Max, VF:1.30V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to FES16GT-E3/45.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Recovery Time
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Capacitance @ Vr, F
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power Dissipation-Max
    Output Current-Max
    Rep Pk Reverse Voltage-Max
    JEDEC-95 Code
    Non-rep Pk Forward Current-Max
    View Compare
  • FES16GT-E3/45
    FES16GT-E3/45
    Vishay Semiconductor Diodes Division
    20 Weeks
    Through Hole
    Through Hole
    TO-220-2
    2
    SILICON
    Tube
    2011
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    FES16G
    3
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 400V
    1.3V @ 16A
    CATHODE
    16A
    -65°C~150°C
    250A
    EFFICIENCY
    1.3V
    400V
    16A
    1
    50 ns
    10μA
    400V
    250A
    400V
    50 ns
    15.32mm
    10.54mm
    4.7mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FES16HTR
    FES16HTR
    Fairchild/ON Semiconductor
    -
    -
    Through Hole
    TO-220-2
    -
    -
    Tube
    2001
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    FES16H
    -
    -
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 500V
    1.5V @ 8A
    -
    -
    -65°C~150°C
    -
    -
    -
    -
    -
    -
    50ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220-2
    500V
    16A
    145pF @ 4V 1MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FES16GT-E3/45 vs FES16HTR
  • FES16BT-E3/45
    FES16BT-E3/45
    Vishay Semiconductor Diodes Division
    -
    Surface Mount, Through Hole
    Through Hole
    TO-220-2
    2
    SILICON
    Tube
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    150°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    FES16B
    3
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 100V
    975mV @ 16A
    CATHODE
    1A
    -65°C~150°C
    250A
    EFFICIENCY
    975mV
    100V
    16A
    1
    35 ns
    10μA
    600V
    250A
    100V
    35 ns
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FES16GT-E3/45 vs FES16BT-E3/45
  • FES16ATR
    FES16ATR
    Fairchild/ON Semiconductor
    -
    -
    Through Hole
    TO-220-2
    -
    SILICON
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    TIN
    -
    -
    HIGH RELIABILITY
    -
    -
    -
    3
    1
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 50V
    950mV @ 8A
    CATHODE
    -
    -65°C~150°C
    -
    GENERAL PURPOSE
    -
    -
    -
    1
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    50V
    16A
    170pF @ 4V 1MHz
    NO
    SINGLE
    NOT APPLICABLE
    NOT APPLICABLE
    R-PSFM-T2
    COMMERCIAL
    SINGLE
    7.81W
    16A
    50V
    TO-220AC
    250A
    FES16GT-E3/45 vs FES16ATR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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