Rohm Semiconductor DTC115EUAT106
- Part Number:
- DTC115EUAT106
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2471118-DTC115EUAT106
- Description:
- TRANS PREBIAS NPN 200MW UMT3
- Datasheet:
- DTC115EUAT106
Rohm Semiconductor DTC115EUAT106 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTC115EUAT106.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating20mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberDTC115
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min82
- Resistor - Base (R1)100 k Ω
- Resistor - Emitter Base (R2)100 k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DTC115EUAT106 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTC115EUAT106 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTC115EUAT106. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTC115EUAT106 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTC115EUAT106. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DTC115EUAT106 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
DTC115EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
TRANSISTOR,NPN,50V,0.02A,SOT-323; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 100kohm; Base-Emitter Resistor R2: 100kohm; R
TRANSISTOR,NPN,50V,0.02A,SOT-323; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:50V; Gain Bandwidth ft Typ:250MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:82; Transistor Case ;RoHS Compliant: Yes
DTC115EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
TRANSISTOR,NPN,50V,0.02A,SOT-323; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 100kohm; Base-Emitter Resistor R2: 100kohm; R
TRANSISTOR,NPN,50V,0.02A,SOT-323; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:50V; Gain Bandwidth ft Typ:250MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:82; Transistor Case ;RoHS Compliant: Yes
The three parts on the right have similar specifications to DTC115EUAT106.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionhFE MinResistor - Base (R1)Resistor - Emitter Base (R2)REACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialReach Compliance CodeJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxPolarity/Channel TypeVCEsat-MaxTerminationPower DissipationContinuous Collector CurrentView Compare
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DTC115EUAT10610 WeeksSurface MountSurface MountSC-70, SOT-3233Tape & Reel (TR)2006e1yesNot For New Designs1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 18541.21.00.75BIP General Purpose Small Signal50V200mWDUALGULL WING26020mA10DTC1153100mA50V1NPNSingleSWITCHINGNPN - Pre-Biased300mV20mA82 @ 5mA 5V500nA300mV @ 250μA, 5mA50V250MHz50V250MHz82100 k Ω100 k ΩNo SVHCNoROHS3 CompliantLead Free-------------
-
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2016--Active1 (Unlimited)3EAR99---DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.58541.21.00.75--200mWDUALGULL WINGNOT SPECIFIED-NOT SPECIFIED-3--1--SWITCHINGNPN - Pre-Biased300mV100mA33 @ 10mA 5V500nA300mV @ 500μA, 10mA50V250MHz50V250MHz-2.2 k Ω10 k Ω--ROHS3 Compliant-SILICONnot_compliantR-PDSO-G3Not Qualified150°CSINGLE WITH BUILT-IN RESISTOR200mWNPN0.3 V---
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10 WeeksSurface MountSurface MountSC-70, SOT-3233Tape & Reel (TR)2009e1yesNot For New Designs1 (Unlimited)3EAR99TIN SILVER COPPER150°C-55°CBUILT-IN BIAS RESISTOR8541.21.00.75BIP General Purpose Small Signal50V200mWDUALGULL WING260100mA10DTC1253--1NPNSingleSWITCHINGNPN - Pre-Biased50V100mA100 @ 1mA 5V500nA ICBO300mV @ 50μA, 500μA50V250MHz50V250MHz100200 k Ω--NoROHS3 CompliantLead Free------------
-
10 WeeksSurface MountSurface MountSC-70, SOT-3233Tape & Reel (TR)2006e1yesNot For New Designs1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 2.18541.21.00.75BIP General Purpose Small Signal50V200mWDUALGULL WING260100mA10DTC1433--1NPNSingleSWITCHINGNPN - Pre-Biased300mV100mA30 @ 10mA 5V500nA300mV @ 500μA, 10mA50V250MHz50V250MHz304.7 k Ω10 k ΩNo SVHCNoROHS3 CompliantLead Free---------SMD/SMT200mW100mA
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