Rohm Semiconductor DTC114GKAT146
- Part Number:
- DTC114GKAT146
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2469673-DTC114GKAT146
- Description:
- TRANS PREBIAS NPN 200MW SMT3
- Datasheet:
- DTC114GKAT146
Rohm Semiconductor DTC114GKAT146 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTC114GKAT146.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberDTC114
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10 k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DTC114GKAT146 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTC114GKAT146 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTC114GKAT146. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTC114GKAT146 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTC114GKAT146. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DTC114GKAT146 More Descriptions
DTC114GKA Series 50 V 100 mA 10 kO Surface Mount NPN Digital Transistor - SC-59
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R
TRANSISTOR DIGITAL SC-59 100MA NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:10mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-346; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Package / Case:SOT-346; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:General Purpose
TRANSISTOR DIGITAL SC-59 100MA NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:10mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min ;RoHS Compliant: Yes
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R
TRANSISTOR DIGITAL SC-59 100MA NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:10mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-346; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:10mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Package / Case:SOT-346; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:General Purpose
TRANSISTOR DIGITAL SC-59 100MA NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:10mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min ;RoHS Compliant: Yes
The three parts on the right have similar specifications to DTC114GKAT146.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentResistor - Emitter Base (R2)REACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeResistor - Base (R1)Transistor Element MaterialReach Compliance CodeJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxPolarity/Channel TypeVCEsat-MaxView Compare
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DTC114GKAT146Surface MountSurface MountTO-236-3, SC-59, SOT-23-33Tape & Reel (TR)2009e1yesNot For New Designs1 (Unlimited)3SMD/SMTEAR99Tin/Silver/Copper (Sn/Ag/Cu)150°C-55°CBUILT-IN BIAS RESISTOR8541.21.00.75BIP General Purpose Small Signal50V200mWDUALGULL WING260100mA10DTC11431NPNSingle200mWSWITCHINGNPN - Pre-Biased50V100mA30 @ 5mA 5V500nA ICBO300mV @ 500μA, 10mA50V250MHz50V250MHz5V30100mA10 k ΩNo SVHCNoROHS3 CompliantLead Free------------
-
Surface MountSurface MountSOT-7233Tape & Reel (TR)2006e2yesActive1 (Unlimited)3-EAR99Tin/Copper (Sn/Cu)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 2.18541.21.00.75BIP General Purpose Small Signal50V150mWDUALFLAT260100mA10DTC14331NPNSingle150mWSWITCHINGNPN - Pre-Biased300mV100mA30 @ 10mA 5V500nA300mV @ 500μA, 10mA50V250MHz50V250MHz-30100mA10 k Ω-NoROHS3 CompliantLead Free13 Weeks4.7 k Ω---------
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Through HoleThrough HoleSC-72 Formed Leads3Tape & Box (TB)2006e1-Obsolete1 (Unlimited)3-EAR99TIN SILVER COPPER150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 18541.21.00.75BIP General Purpose Small Signal50V300mW--260100mA10DTC14331NPNSingle300mWSWITCHINGNPN - Pre-Biased300mV100mA30 @ 10mA 5V500nA300mV @ 500μA, 10mA50V250MHz-250MHz-30-4.7 k ΩNo SVHCNoROHS3 CompliantLead Free-4.7 k Ω---------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2016--Active1 (Unlimited)3-EAR99---DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.58541.21.00.75--200mWDUALGULL WINGNOT SPECIFIED-NOT SPECIFIED-31---SWITCHINGNPN - Pre-Biased300mV100mA33 @ 10mA 5V500nA300mV @ 500μA, 10mA50V250MHz50V250MHz---10 k Ω--ROHS3 Compliant-13 Weeks2.2 k ΩSILICONnot_compliantR-PDSO-G3Not Qualified150°CSINGLE WITH BUILT-IN RESISTOR200mWNPN0.3 V
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