Toshiba Semiconductor and Storage CMS06(TE12L,Q,M)
- Part Number:
- CMS06(TE12L,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2419710-CMS06(TE12L,Q,M)
- Description:
- DIODE SCHOTTKY 30V 2A MFLAT
- Datasheet:
- CMS06(TE12L,Q,M)
Toshiba Semiconductor and Storage CMS06(TE12L,Q,M) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage CMS06(TE12L,Q,M).
- Factory Lead Time12 Weeks
- Contact PlatingSilver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOD-128
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Max Operating Temperature125°C
- Min Operating Temperature-40°C
- Terminal PositionDUAL
- Terminal FormFLAT
- Base Part NumberCMS06
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr3mA @ 30V
- Voltage - Forward (Vf) (Max) @ If370mV @ 2A
- Forward Current2A
- Max Reverse Leakage Current3mA
- Operating Temperature - Junction-40°C~125°C
- Max Surge Current40A
- Output Current-Max2A
- ApplicationGENERAL PURPOSE
- Forward Voltage370mV
- Max Reverse Voltage (DC)30V
- Average Rectified Current2A
- Number of Phases1
- Peak Reverse Current3mA
- Max Repetitive Reverse Voltage (Vrrm)30V
- Capacitance @ Vr, F130pF @ 10V 1MHz
- Peak Non-Repetitive Surge Current40A
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
CMS06(TE12L,Q,M) Overview
In this device, the maximum reverse leakage current is 3mA volts.The average rectified current for this device is 2A volts.When the forward current reaches 2A, it is allowed.The maximum surge current is 40A.As far as output current is concerned, 2A is the maximum.A data chart shows that the peak reverse is 3mA in the datasheets.
CMS06(TE12L,Q,M) Features
a maximal reverse leakage current of 3mA volts
an average rectified current of 2A volts
2A is the maximum value
the peak reverse is 3mA
CMS06(TE12L,Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
CMS06(TE12L,Q,M) applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
In this device, the maximum reverse leakage current is 3mA volts.The average rectified current for this device is 2A volts.When the forward current reaches 2A, it is allowed.The maximum surge current is 40A.As far as output current is concerned, 2A is the maximum.A data chart shows that the peak reverse is 3mA in the datasheets.
CMS06(TE12L,Q,M) Features
a maximal reverse leakage current of 3mA volts
an average rectified current of 2A volts
2A is the maximum value
the peak reverse is 3mA
CMS06(TE12L,Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
CMS06(TE12L,Q,M) applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
CMS06(TE12L,Q,M) More Descriptions
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon
Rectifier Diode Schottky 30V 2A 2-Pin M-FLAT T/R
X35 Pb-F Diode M-Flat Moq=3000 V=30 F=60Hz
SCHOTTKY RECTIFIER, 30V, 2A, SMD;
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPESWITCHING MODE POWER SUPPLY APPLICATIONSPORTABLE EQUIPMENT BATTERY APPLICATIONS
Rectifier Diode Schottky 30V 2A 2-Pin M-FLAT T/R
X35 Pb-F Diode M-Flat Moq=3000 V=30 F=60Hz
SCHOTTKY RECTIFIER, 30V, 2A, SMD;
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPESWITCHING MODE POWER SUPPLY APPLICATIONSPORTABLE EQUIPMENT BATTERY APPLICATIONS
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