Vishay Semiconductor Diodes Division BZX55C6V8-TAP
- Part Number:
- BZX55C6V8-TAP
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2441227-BZX55C6V8-TAP
- Description:
- DIODE ZENER 6.8V 500MW DO35
- Datasheet:
- BZX55C6V8-TAP
Vishay Semiconductor Diodes Division BZX55C6V8-TAP technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BZX55C6V8-TAP.
- Factory Lead Time10 Weeks
- Contact PlatingSilver, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseDO-204AH, DO-35, Axial
- Number of Pins2
- Operating Temperature-65°C~175°C
- PackagingTape & Box (TB)
- SeriesAutomotive, AEC-Q101
- Published2014
- Tolerance±5%
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN SILVER
- HTS Code8541.10.00.50
- Max Power Dissipation500mW
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Impedance8Ohm
- Element ConfigurationSingle
- Current250mA
- Diode TypeZENER DIODE
- Current - Reverse Leakage @ Vr100nA @ 3V
- Power Dissipation500mW
- Voltage - Forward (Vf) (Max) @ If1.5V @ 200mA
- Max Reverse Leakage Current100nA
- Impedance-Max8Ohm
- Test Current5mA
- Breakdown Voltage7.2V
- Zener Voltage6.8V
- Voltage Tolerance6%
- ESD ProtectionNo
- Height1.7mm
- Length3.9mm
- Width1.7mm
- RoHS StatusROHS3 Compliant
BZX55C6V8-TAP Overview
The reverse leakage current for this electrical device is 100nA @ 3V.Reverse leakage currents can reach 100nA.This value reaches 1.5V @ 200mA when the maximum Forward voltage (Vf) is applied.
BZX55C6V8-TAP Features
reverse leakage current of 100nA @ 3V
100nA @ 3V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
BZX55C6V8-TAP Applications
There are a lot of Vishay Semiconductor Diodes Division
BZX55C6V8-TAP applications of zener single diodes.
The reverse leakage current for this electrical device is 100nA @ 3V.Reverse leakage currents can reach 100nA.This value reaches 1.5V @ 200mA when the maximum Forward voltage (Vf) is applied.
BZX55C6V8-TAP Features
reverse leakage current of 100nA @ 3V
100nA @ 3V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
BZX55C6V8-TAP Applications
There are a lot of Vishay Semiconductor Diodes Division
BZX55C6V8-TAP applications of zener single diodes.
BZX55C6V8-TAP More Descriptions
Diode Zener Single 6.8V 6% 500mW 2-Pin DO-35 Ammo
Product Description Demo for Development.
French Electronic Distributor since 1988
Diode; Zener Voltage Typ, Vz:6.8V; Power Dissipation, Pd:500mW; No. of Pins:2; Breakdown Voltage Max:7.2V; Leaded Process Compatible:Yes; Package/Case:DO-35; Peak Reflow Compatible (260 C):Yes; Vz Test Current, Izt:5mA ;RoHS Compliant: Yes
Product Description Demo for Development.
French Electronic Distributor since 1988
Diode; Zener Voltage Typ, Vz:6.8V; Power Dissipation, Pd:500mW; No. of Pins:2; Breakdown Voltage Max:7.2V; Leaded Process Compatible:Yes; Package/Case:DO-35; Peak Reflow Compatible (260 C):Yes; Vz Test Current, Izt:5mA ;RoHS Compliant: Yes
The three parts on the right have similar specifications to BZX55C6V8-TAP.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedToleranceJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)ImpedanceElement ConfigurationCurrentDiode TypeCurrent - Reverse Leakage @ VrPower DissipationVoltage - Forward (Vf) (Max) @ IfMax Reverse Leakage CurrentImpedance-MaxTest CurrentBreakdown VoltageZener VoltageVoltage ToleranceESD ProtectionHeightLengthWidthRoHS StatusSupplier Device PackagePower - MaxVoltage - Zener (Nom) (Vz)View Compare
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BZX55C6V8-TAP10 WeeksSilver, TinThrough HoleThrough HoleDO-204AH, DO-35, Axial2-65°C~175°CTape & Box (TB)Automotive, AEC-Q1012014±5%e2yesActive1 (Unlimited)2EAR99TIN SILVER8541.10.00.50500mWWIRE2608OhmSingle250mAZENER DIODE100nA @ 3V500mW1.5V @ 200mA100nA8Ohm5mA7.2V6.8V6%No1.7mm3.9mm1.7mmROHS3 Compliant----
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20 Weeks--Through HoleDO-204AH, DO-35, Axial--55°C~175°C TJTape & Box (TB)--±2%--Active1 (Unlimited)-----------1μA @ 1V-1V @ 100mA-75Ohms--------ROHS3 CompliantDO-35500mW4.3V
-
20 Weeks--Through HoleDO-204AH, DO-35, Axial--55°C~175°C TJTape & Box (TB)--±2%--Active1 (Unlimited)-----------100nA @ 5V-1V @ 100mA-7Ohms--------ROHS3 CompliantDO-35500mW7.5V
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20 Weeks--Through HoleDO-204AH, DO-35, Axial--55°C~175°C TJTape & Box (TB)--±2%--Active1 (Unlimited)-----------100nA @ 14V-1V @ 100mA-50Ohms--------ROHS3 CompliantDO-35500mW18V
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