part#BUZ73, Manufacturer:SIEMENS is available at ventronchip.com, see description of BUZ73 as below .use the request quote form to request BUZ73 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for BUZ73 depending on the quantity required, availability and warehouse location.
BUZ73 More Descriptions
INFINEON BUZ73 / MOSFET INFINEON TO-220-UP 200V
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:7A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination ;RoHS Compliant: Yes
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:40W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:7A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination ;RoHS Compliant: Yes
The three parts on the right have similar specifications to BUZ73.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)Terminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyRoHS StatusSubcategoryOperating Temperature (Max)Power Dissipation-Max (Abs)View Compare
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BUZ73------------------------------ -
NO3SILICONe0noNOT SPECIFIEDTIN LEADAVALANCHE RATEDSINGLETHROUGH-HOLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-CHANNELTO-220AB2.9A3.5Ohm11.5A600V180 mJMETAL-OXIDE SEMICONDUCTORNon-RoHS Compliant---
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NO3SILICONe0--Tin/Lead (Sn/Pb)AVALANCHE RATEDSINGLETHROUGH-HOLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEN-CHANNELTO-220AB2.1A4Ohm11A600V180 mJMETAL-OXIDE SEMICONDUCTORNon-RoHS CompliantFET General Purpose Power150°C40W
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NO--e0--Tin/Lead (Sn/Pb)--------SingleENHANCEMENT MODEN-CHANNEL-2A----METAL-OXIDE SEMICONDUCTORNon-RoHS CompliantFET General Purpose Power150°C40W
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