SIEMENS BUZ342 technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BUZ342.
- Surface MountNO
- Number of Terminals3
- Transistor Element MaterialSILICON
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED
- Terminal PositionSINGLE
- Terminal FormTHROUGH-HOLE
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-218
- Drain Current-Max (Abs) (ID)60A
- Drain-source On Resistance-Max0.01Ohm
- Pulsed Drain Current-Max (IDM)240A
- DS Breakdown Voltage-Min50V
- Avalanche Energy Rating (Eas)460 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Feedback Cap-Max (Crss)1000 pF
- Turn Off Time-Max (toff)590ns
- Turn On Time-Max (ton)460ns
- Power Dissipation Ambient-Max400W
BUZ342 Overview
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BUZ342 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BUZ342. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by SIEMENS and belongs to the category of Modules. The images we provide are for reference only, for detailed product information please see specification sheet BUZ342 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BUZ342. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BUZ342 More Descriptions
60 A 50 V 0.01 ohm N-CHANNEL Si POWER MOSFET TO-218AA
Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
Contact for details
Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
Contact for details
The three parts on the right have similar specifications to BUZ342.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialECCN CodeAdditional FeatureTerminal PositionTerminal FormJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyFeedback Cap-Max (Crss)Turn Off Time-Max (toff)Turn On Time-Max (ton)Power Dissipation Ambient-MaxReach Compliance CodeView Compare
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BUZ342NO3SILICONEAR99AVALANCHE RATEDSINGLETHROUGH-HOLER-PSFM-T3Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGN-CHANNELTO-21860A0.01Ohm240A50V460 mJMETAL-OXIDE SEMICONDUCTOR1000 pF590ns460ns400W-- -
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