The BUZ31 is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) , it is part of series. they are designed to work as Modules.BUZ31 with pin details manufactured by SIEMENS. The BUZ31 is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Modules.it is with Operating Temperature .BUZ31 with original stock manufactured by SIEMENS. The BUZ31 is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of BUZ31is designed to work in , it's Operating Temperature is .The BUZ31 is available in Package, is part of the Modules and belong to Discrete Semiconductor Products.BUZ31 with EDA / CAD Models manufactured by SIEMENS. The BUZ31 is available in Package, is part of the Discrete Semiconductor Products.The BUZ31 is Modules with package manufactured by SIEMENS. The BUZ31 is available in Package, is part of the SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated).
BUZ31 More Descriptions
MOSFET N-CH 200V 14.5A TO220AB
Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 9
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:14.5A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:95W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:200mJ; Capacitance Ciss Typ:840pF; Current Id Max:14.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:200mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation Pd:95W; Power Dissipation Pd:75W; Power Dissipation Ptot Max:95W; Pulse Current Idm:58A; Reverse Recovery Time trr Typ:170ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2.1V
Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 9
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:14.5A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:95W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:200mJ; Capacitance Ciss Typ:840pF; Current Id Max:14.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:200mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation Pd:95W; Power Dissipation Pd:75W; Power Dissipation Ptot Max:95W; Pulse Current Idm:58A; Reverse Recovery Time trr Typ:170ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2.1V
The three parts on the right have similar specifications to BUZ31.
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