The BSS138 is SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) , it is part of series. they are designed to work as Modules.BSS138 with pin details manufactured by SIEMENS. The BSS138 is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Modules.it is with Operating Temperature .BSS138 with original stock manufactured by SIEMENS. The BSS138 is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of BSS138is designed to work in , it's Operating Temperature is .The BSS138 is available in Package, is part of the Modules and belong to Discrete Semiconductor Products.BSS138 with EDA / CAD Models manufactured by SIEMENS. The BSS138 is available in Package, is part of the Discrete Semiconductor Products.The BSS138 is Modules with package manufactured by SIEMENS. The BSS138 is available in Package, is part of the SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level).
BSS138 More Descriptions
Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
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