Infineon Technologies BGS12PL6E6327XTSA1

RF Switch IC GSM, LTE, W-CDMA SPDT 4 GHz 50 Ohm - TSLP-6-4
Rf Switch, Spdt, 4Ghz, Tslp-6; Frequency Min:100Mhz; Frequency Max:4Ghz; Rf Ic Case Style:Dfn; No. Of Pins:6Pins; Supply Voltage Min:2.4V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C Rohs Compliant: Yes |Infineon BGS12PL6E6327XTSA1
The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications from 30MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones, TSLP-6-4, RoHSInfineon SCT
The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration, as shown in Figure 1 (see datasheet) offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switchs maximum input power level of 35 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz range. | Summary of Features: 2 high-linearity TRx paths with power handling capability of up to 35 dBm; All ports fully symmetrical; Low insertion loss; Low harmonic generation; High port-to-port isolation; 0.1 to 4 GHz coverage; High ESD robustness; On-chip control logic; Very small leadless and halogen free package TSLP-6-4 (0.7x1.1mm 2) with super low height of 0.31 mm; No decoupling capacitors required if no DC applied on RF lines; RoHS compliant package