Infineon Technologies BCR523E6327HTSA1

Name: BCR523E6327HTSA1
Brand: Infineon Technologies
SKU: 3585573-BCR523E6327HTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCR523E6327HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3585573-BCR523E6327HTSA1

Description:: TRANS PREBIAS NPN 0.33W SOT23-3

ECAD Model:

Datasheet:: BCR523E6327HTSA1

Specifications

Infineon Technologies BCR523E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR523E6327HTSA1.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
50V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
500mA
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCR523
JESD-30 Code
R-PDSO-G6
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
330mW
Transistor Application
SWITCHING
Halogen Free
Not Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
50V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
70
Max Junction Temperature (Tj)
150°C
Resistor - Base (R1)
1 k Ω
Resistor - Emitter Base (R2)
10 k Ω
Height
1.1mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCR523E6327HTSA1 Description
The BCR523E6327HTSA1 is an NPN Silicon Digital Transistor with a built-in bias resistor (R1= 1 kΩ, R2= 10 kΩ).

BCR523E6327HTSA1 Feature BCR523U: Two (galvanic) internal isolated transistors with good matching in one package
Pb-free (RoHS compliant) package
Available in the SOT-23 Package

Qualified according to AEC Q101
NPN Typ.

BCR523E6327HTSA1 Applications
Driver circuit
Interface circuit
Switching circuit
Inverter

BCR523E6327HTSA1 More Descriptions

Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
NPN 50 V 500 mA 100 MHz 330 mW SMT Pre-Biased Bipolar Transistor-PG-SOT23
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
NPN 50V 500mA 100MHz 0.33W; BCR523E6327HTSA1 BCR523E6433HTMA1 BCR523E6433 BCR523E6327
TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:500mA; DC Current Gain hFE:70; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:500mA; Collector Emitter Voltage Vces:300mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:5mA; Full Power Rating Temperature:79°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:70; Hfe Typ:70; No. of Transistors:1; Package / Case:SOT-23; Pin Format:1B, 2E, 3C; Power Dissipation Pd:330mW; Power Dissipation Ptot Max:330mW; Resistance R1:1kohm; Resistance R2:10kohm; SMD Marking:XGs; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:12V; Voltage Vi on @ Ic 2mA:0.4V
NPN Silicon Digital Transistors | Summary of Features: Switching circuit, inverter circuit, driver circuit; Built in bias resistor (R1= 1 k, R2= 10 k); BCR523U: Two (galvanic) internal isolated transistors with good matching in one package; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 330 / Typical Input Resistor kOhm = 1 / Typical Resistor Ratio = 0.1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 100

Certification