NXP BCP56-10,115

Part Number:: BCP56-10,115

Manufacturer:: NXP

Ventron No:: 6224865-BCP56-10,115

Description:

ECAD Model:

Datasheet:: BCP56-10,115

Specifications

NXP BCP56-10,115 technical specifications, attributes, parameters and parts with similar specifications to NXP BCP56-10,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Max Power Dissipation
960mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
960mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Height
1.7mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP56-10,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCP56-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BCP56-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP56-10,115 More Descriptions

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BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ, ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes

Certification