NXP BCP52
- Part Number:
- BCP52
- Manufacturer:
- NXP
- Ventron No:
- 6121782-BCP52
- Description:
- Datasheet:
- BCP52
NXP BCP52 technical specifications, attributes, parameters and parts with similar specifications to NXP BCP52.
- Voltage - Collector Emitter Breakdown (Max):60V
- Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
- Transistor Type:PNP
- Supplier Device Package:SOT-223-4
- Series:-
- Power - Max:1.5W
- Packaging:Tape & Reel (TR)
- Package / Case:TO-261-4, TO-261AA
- Other Names:BCP52-ND
BCP52FSTR - Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Manufacturer Standard Lead Time:27 Weeks
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Frequency - Transition:-
- Detailed Description:Bipolar (BJT) Transistor PNP 60V 1.2A 1.5W Surface Mount SOT-223-4
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
- Current - Collector Cutoff (Max):100nA (ICBO)
- Current - Collector (Ic) (Max):1.2A
- Base Part Number:BCP52
Images are for reference only.See Product Specifications for product details.If you are interested to buy BCP52.
BCP52 More Descriptions
Trans GP BJT PNP 60V 1.2A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 60V 1.2A SOT-223
Bipolar Transistors - BJT SOT-223 PNP GP AMP
Power Bipolar Transistor, 1.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.
Bipolar Transistors - BJT SOT-223 PNP GP AMP
Power Bipolar Transistor, 1.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.
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