Vishay Semiconductor Diodes Division BAV19W-E3-08
- Part Number:
- BAV19W-E3-08
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2433212-BAV19W-E3-08
- Description:
- DIODE GEN PURP 100V 250MA SOD123
- Datasheet:
- BAV19W-E3-08
Vishay Semiconductor Diodes Division BAV19W-E3-08 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BAV19W-E3-08.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOD-123
- Weight10.290877mg
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.10.00.70
- SubcategoryRectifier Diodes
- Max Power Dissipation410mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count2
- JESD-30 CodeR-PDSO-G2
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr100nA @ 100V
- Voltage - Forward (Vf) (Max) @ If1.25V @ 200mA
- Forward Current250mA
- Max Reverse Leakage Current100nA
- Operating Temperature - Junction150°C Max
- Max Surge Current1A
- Output Current-Max0.2A
- Voltage - DC Reverse (Vr) (Max)100V
- Current - Average Rectified (Io)250mA DC
- Reverse Recovery Time50 ns
- Max Repetitive Reverse Voltage (Vrrm)120V
- Capacitance @ Vr, F1.5pF @ 0V 1MHz
- Peak Non-Repetitive Surge Current1A
- Recovery Time50 ns
- RoHS StatusROHS3 Compliant
BAV19W-E3-08 Overview
A maximum reverse leakage current of 100nA volts is produced by this device.Forward current is allowed to reach a value of zero.The least amount of 410mW heat is generated by electronic or electrical devices (loss of energy).Surge currents can be used up to 1A.The maximum output current is 0.2A.
BAV19W-E3-08 Features
a maximal reverse leakage current of 100nA volts
the least amount of 410mW heat (energy loss)
0.2A is the maximum value
BAV19W-E3-08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BAV19W-E3-08 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A maximum reverse leakage current of 100nA volts is produced by this device.Forward current is allowed to reach a value of zero.The least amount of 410mW heat is generated by electronic or electrical devices (loss of energy).Surge currents can be used up to 1A.The maximum output current is 0.2A.
BAV19W-E3-08 Features
a maximal reverse leakage current of 100nA volts
the least amount of 410mW heat (energy loss)
0.2A is the maximum value
BAV19W-E3-08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BAV19W-E3-08 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
BAV19W-E3-08 More Descriptions
Switching Diode Genpurp Sod123120V, 1V@100Ma, 50Ns, Ifmax=250Ma |Vishay BAV19W-E3-08
Diode Small Signal Switching 120V 0.25A 2-Pin SOD-123 T/R
Diodes - General Purpose, Power, Switching 120V 625mA 1A IFSM
SWITCHING DIODE GENPURP SOD123
DIODE GEN PURP 100V 250MA SOD123
Diode Small Signal Switching 120V 0.25A 2-Pin SOD-123 T/R
Diodes - General Purpose, Power, Switching 120V 625mA 1A IFSM
SWITCHING DIODE GENPURP SOD123
DIODE GEN PURP 100V 250MA SOD123
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