Infineon Technologies BAT6302VH6327XTSA1
- Part Number:
- BAT6302VH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2438119-BAT6302VH6327XTSA1
- Description:
- DIODE SCHOTTKY 3V 100MA SC79
- ECAD Model:
-
- Datasheet:
- BAT6302VH6327XTSA1
Infineon Technologies BAT6302VH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BAT6302VH6327XTSA1.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Package / CaseSC-79, SOD-523
- Number of Pins2
- Diode Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Additional FeatureHIGH SPEED
- HTS Code8541.10.00.60
- Terminal PositionDUAL
- Terminal FormFLAT
- Number of Elements1
- Max Current Rating100mA
- Power Dissipation-Max100mW
- Element ConfigurationSingle
- Diode TypeSchottky - Single
- Forward Current100mA
- Halogen FreeHalogen Free
- Forward Voltage190mV
- Max Repetitive Reverse Voltage (Vrrm)3V
- Capacitance @ Vr, F0.85pF @ 0.2V 1MHz
- Diode Capacitance-Max0.85pF
- Type of Schottky BarrierLOW BARRIER
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAT6302VH6327XTSA1 Overview
A forward voltage higher than 190mV is recommended for systems.
BAT6302VH6327XTSA1 Features
BAT6302VH6327XTSA1 Applications
There are a lot of Infineon Technologies
BAT6302VH6327XTSA1 applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
A forward voltage higher than 190mV is recommended for systems.
BAT6302VH6327XTSA1 Features
BAT6302VH6327XTSA1 Applications
There are a lot of Infineon Technologies
BAT6302VH6327XTSA1 applications of RF diodes.
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
BAT6302VH6327XTSA1 More Descriptions
Diode Schottky 3V 0.1A 2-Pin SC-79 T/R
DIODE, RF SCHOTTKY, 0.1A, 3V, SC-79; Diode Configuration: Single; Reverse Voltage Vr: 3V; Forward Current If Max: 100mA; Forward Voltage VF Max: 300mV; Capacitance Ct: 0.85pF; Diode Case Style: SC-79; No. of Pins: 2 Pin; Product Range: BAT63 Series; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 100mA; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Repetitive Reverse Voltage Vrrm Max: 3V; Semiconductor Technology: SiC
Silicon Schottky Diodes | Summary of Features: Low barrier diode for detectors up to GHz frequencies; For high-speed applications; Zero bias detector diode; Pb-free (RoHS compliant) package | Target Applications: Wireless Communications; Satellite Receivers; Base Stations; High Speed Data Networks; RFID
DIODE, RF SCHOTTKY, 0.1A, 3V, SC-79; Diode Configuration: Single; Reverse Voltage Vr: 3V; Forward Current If Max: 100mA; Forward Voltage VF Max: 300mV; Capacitance Ct: 0.85pF; Diode Case Style: SC-79; No. of Pins: 2 Pin; Product Range: BAT63 Series; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 100mA; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Repetitive Reverse Voltage Vrrm Max: 3V; Semiconductor Technology: SiC
Silicon Schottky Diodes | Summary of Features: Low barrier diode for detectors up to GHz frequencies; For high-speed applications; Zero bias detector diode; Pb-free (RoHS compliant) package | Target Applications: Wireless Communications; Satellite Receivers; Base Stations; High Speed Data Networks; RFID
-
Schottky - 2 Independent 0.6pF @ 0V 1MHz 150°C TJ Tape & Reel (TR) 4-XFDFN
-
Schottky - Single 1pF @ 0V 1MHz 150°C TJ 3 Terminations SILICON DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
-
Schottky - 1 Pair Series Connection 1pF @ 0V 1MHz 150°C TJ 3 Terminations SILICON NOT SPECIFIED Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
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